Temperature dependence of viscosity of molten GaAs by an oscillating cup method

Koichi Kakimoto, Taketoshi Hibiya

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A viscosity measurement system for molten semiconductors has been established by adopting an oscillating cup method. The temperature dependence of viscosity for molten GaAs in the temperature range from near the melting point up to 1480°C was obtained. The viscosity and activation energy of molten GaAs showed a remarkable increase in the vicinity of the melting point (1238°C). The viscosity of molten GaAs decreases with an increase in temperature above 1320°C, with an activation energy of about 0.28 eV.

Original languageEnglish
Pages (from-to)1249-1250
Number of pages2
JournalApplied Physics Letters
Volume50
Issue number18
DOIs
Publication statusPublished - Dec 1 1987
Externally publishedYes

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viscosity
temperature dependence
melting points
activation energy
temperature
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Temperature dependence of viscosity of molten GaAs by an oscillating cup method. / Kakimoto, Koichi; Hibiya, Taketoshi.

In: Applied Physics Letters, Vol. 50, No. 18, 01.12.1987, p. 1249-1250.

Research output: Contribution to journalArticle

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