Temperature dependence thermal conductivity measurement of indium-gallium-zinc-oxide thin films utilizing 3ω Method

Rauf Khan, Shim Chang-Hoon, Reiji Hattori, M. Ohtaki, K. Miyazaki

Research output: Contribution to journalConference articlepeer-review

Abstract

The temperature dependence of the cross-plane thermal conductivity of Indium-Gallium-Zinc-Oxide (IGZO) thin film was measured using a differential three-omega method. The IGZO thin films were deposited on Al2O3 substrate by DC sputtering at room temperature. The thermal conductivities were observed to be 1.6, 1.8, and 2.6 W/(m·K) at some different oxygen partial pressures, 0%, 10%, and 65%, respectively. Furthermore, the thermal conductivity of IGZO thin film is decreasing with increasing the measurement ambient temperature according to the crystalline material typical characteristics. These results notify that a crystallinity exists inside the IGZO films and this crystalline phase governs the heat conduction into IGZO films.

Original languageEnglish
Pages (from-to)162-165
Number of pages4
JournalProceedings of the International Display Workshops
Volume27
Publication statusPublished - Dec 9 2021
Event27th International Display Workshops, IDW 2020 - Virtual, Online
Duration: Dec 9 2020Dec 11 2020

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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