Temperature dependency of dielectric properties in epitaxially grown SrBi4Ti4O15 films with different orientation

Hiroshi Funakubo, Muneyasu Suzuki, Kenji Takahashi, Takayuki Watanabe

Research output: Contribution to journalArticle

Abstract

(001)-, (1110), and (105)- oriented SrBi4Ti4O 15 films with its c-axis tilted 0, 45 and 55° from the surface normal were epitaxially grown by metal organic chemical vapor deposition and the temperature dependency of the dielectric constant was systematically investigated. Relative dielectric constant, ∈r, and its temperature dependency increased when the tilting angle of the c-axis from the substrate surface normal increased. Temperature dependency of ∈r was positive in case of the (105) and (1110) orientation, which is in good agreement with the conventional ferroelectric materials. On the other hand, it became negative for (001) orientation. This shows the orientation dependency of ∈r in SrBi4Ti4O15.

Original languageEnglish
Pages (from-to)1811-1813
Number of pages3
JournalKey Engineering Materials
Volume368-372 PART 2
Publication statusPublished - Mar 27 2008
Externally publishedYes

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Dielectric properties
Permittivity
Organic Chemicals
Organic chemicals
Temperature
Ferroelectric materials
Chemical vapor deposition
Metals
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Temperature dependency of dielectric properties in epitaxially grown SrBi4Ti4O15 films with different orientation. / Funakubo, Hiroshi; Suzuki, Muneyasu; Takahashi, Kenji; Watanabe, Takayuki.

In: Key Engineering Materials, Vol. 368-372 PART 2, 27.03.2008, p. 1811-1813.

Research output: Contribution to journalArticle

Funakubo, Hiroshi ; Suzuki, Muneyasu ; Takahashi, Kenji ; Watanabe, Takayuki. / Temperature dependency of dielectric properties in epitaxially grown SrBi4Ti4O15 films with different orientation. In: Key Engineering Materials. 2008 ; Vol. 368-372 PART 2. pp. 1811-1813.
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