Fe3Si/FeSi2/Fe3Si trilayered films were grown on Si(111) substrates at a substrate temperature of 300 °C by facing-targets direct-current sputtering, and current-induced magnetization switching in current-perpendicular-to-plane geometry was studied for the films wherein an antiferromagnetic interlayer coupling perpendicular to the plane was probably formed at room temperature. The appearance of a hysteresis loop in the electrical resistance-injection current curve well coincided with that of a hysteresis loop in the magnetization curve perpendicular to the plane. In addition, the hysteresis loop in the electrical resistance-injection current curve disappeared under large magnetic fields. The origin of the change in the electrical resistance for the injection current might be the change in the interlayer coupling.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)