Temperature-dependent current-induced magnetization switching in Fe 3Si/FeSi2/Fe3Si trilayered films

Shin Ichi Hirakawa, Takayuki Sonoda, Ken Ichiro Sakai, Kaoru Takeda, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    Fe3Si/FeSi2/Fe3Si trilayered films were grown on Si(111) substrates at a substrate temperature of 300 °C by facing-targets direct-current sputtering, and current-induced magnetization switching in current-perpendicular-to-plane geometry was studied for the films wherein an antiferromagnetic interlayer coupling perpendicular to the plane was probably formed at room temperature. The appearance of a hysteresis loop in the electrical resistance-injection current curve well coincided with that of a hysteresis loop in the magnetization curve perpendicular to the plane. In addition, the hysteresis loop in the electrical resistance-injection current curve disappeared under large magnetic fields. The origin of the change in the electrical resistance for the injection current might be the change in the interlayer coupling.

    Original languageEnglish
    Article number08JD06
    JournalJapanese journal of applied physics
    Volume50
    Issue number8 PART 2
    DOIs
    Publication statusPublished - Aug 2011

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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