Temperature-dependent current-voltage characteristics and ultraviolet light detection of heterojunction diodes comprising n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films and p-type silicon substrates

Abdelrahman Zkria, Tsuyoshi Yoshitake

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Heterojunction diodes comprising poorly (1 at. %) nitrogen-doped n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films and p-type Si substrates were prepared in nitrogen and hydrogen mixed gas atmosphere by coaxial arc plasma deposition. Dark current density-voltage (J-V) characteristics were studied in the temperature range of 200-400 K, in order to investigate the current transport mechanism through the fabricated heterojunctions. The temperature dependence of the ideality factor and reverse saturation current reveals that carrier transport predominantly occurs in the generation-recombination mechanism and, at low temperatures, it accompanies tunneling via weak traps. The heterojunctions surely exhibited photodetection for 254nm ultraviolet light illumination. It is expected that photocarriers will be generated at UNCD grains and transported through an a-C:H matrix.

Original languageEnglish
Article number07KD04
JournalJapanese Journal of Applied Physics
Volume56
Issue number7
DOIs
Publication statusPublished - Jul 1 2017

Fingerprint

Carbon films
Amorphous carbon
Composite films
Current voltage characteristics
ultraviolet radiation
Heterojunctions
heterojunctions
Diamonds
Diodes
diamonds
diodes
Silicon
composite materials
carbon
electric potential
silicon
Substrates
Nitrogen
nitrogen
Plasma deposition

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "Heterojunction diodes comprising poorly (1 at. {\%}) nitrogen-doped n-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films and p-type Si substrates were prepared in nitrogen and hydrogen mixed gas atmosphere by coaxial arc plasma deposition. Dark current density-voltage (J-V) characteristics were studied in the temperature range of 200-400 K, in order to investigate the current transport mechanism through the fabricated heterojunctions. The temperature dependence of the ideality factor and reverse saturation current reveals that carrier transport predominantly occurs in the generation-recombination mechanism and, at low temperatures, it accompanies tunneling via weak traps. The heterojunctions surely exhibited photodetection for 254nm ultraviolet light illumination. It is expected that photocarriers will be generated at UNCD grains and transported through an a-C:H matrix.",
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