Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition

Nathaporn Promros, Ryuhei Iwasaki, Suguru Funasaki, Kyohei Yamashita, Chen Li, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    n-Type NC-FeSi2/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi2 films. The series resistance, which was estimated by Cheung's method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 105 Ω at 77 K.

    Original languageEnglish
    Title of host publicationFrontiers in Materials and Minerals Engineering
    Pages171-176
    Number of pages6
    DOIs
    Publication statusPublished - Jan 8 2014
    Event5th Regional Conference on Materials Engineering and the 5th Regional Conference on Natural Resources and Materials 2013, RCM5 and RCNRM5 2013 - , Malaysia
    Duration: Jan 22 2013Jan 23 2013

    Publication series

    NameAdvanced Materials Research
    Volume858
    ISSN (Print)1022-6680

    Other

    Other5th Regional Conference on Materials Engineering and the 5th Regional Conference on Natural Resources and Materials 2013, RCM5 and RCNRM5 2013
    CountryMalaysia
    Period1/22/131/23/13

    Fingerprint

    Current voltage characteristics
    Pulsed laser deposition
    Heterojunctions
    Thermionic emission
    Carrier transport
    Temperature

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

    Cite this

    Promros, N., Iwasaki, R., Funasaki, S., Yamashita, K., Li, C., & Yoshitake, T. (2014). Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition. In Frontiers in Materials and Minerals Engineering (pp. 171-176). (Advanced Materials Research; Vol. 858). https://doi.org/10.4028/www.scientific.net/AMR.858.171

    Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition. / Promros, Nathaporn; Iwasaki, Ryuhei; Funasaki, Suguru; Yamashita, Kyohei; Li, Chen; Yoshitake, Tsuyoshi.

    Frontiers in Materials and Minerals Engineering. 2014. p. 171-176 (Advanced Materials Research; Vol. 858).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Promros, N, Iwasaki, R, Funasaki, S, Yamashita, K, Li, C & Yoshitake, T 2014, Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition. in Frontiers in Materials and Minerals Engineering. Advanced Materials Research, vol. 858, pp. 171-176, 5th Regional Conference on Materials Engineering and the 5th Regional Conference on Natural Resources and Materials 2013, RCM5 and RCNRM5 2013, Malaysia, 1/22/13. https://doi.org/10.4028/www.scientific.net/AMR.858.171
    Promros N, Iwasaki R, Funasaki S, Yamashita K, Li C, Yoshitake T. Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition. In Frontiers in Materials and Minerals Engineering. 2014. p. 171-176. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.858.171
    Promros, Nathaporn ; Iwasaki, Ryuhei ; Funasaki, Suguru ; Yamashita, Kyohei ; Li, Chen ; Yoshitake, Tsuyoshi. / Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition. Frontiers in Materials and Minerals Engineering. 2014. pp. 171-176 (Advanced Materials Research).
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    abstract = "n-Type NC-FeSi2/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi2 films. The series resistance, which was estimated by Cheung's method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 105 Ω at 77 K.",
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    AU - Funasaki, Suguru

    AU - Yamashita, Kyohei

    AU - Li, Chen

    AU - Yoshitake, Tsuyoshi

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