Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition

Nathaporn Promros, Ryuhei Iwasaki, Suguru Funasaki, Kyohei Yamashita, Chen Li, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    n-Type NC-FeSi2/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi2 films. The series resistance, which was estimated by Cheung's method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 105 Ω at 77 K.

    Original languageEnglish
    Title of host publicationFrontiers in Materials and Minerals Engineering
    Pages171-176
    Number of pages6
    DOIs
    Publication statusPublished - 2014
    Event5th Regional Conference on Materials Engineering and the 5th Regional Conference on Natural Resources and Materials 2013, RCM5 and RCNRM5 2013 - , Malaysia
    Duration: Jan 22 2013Jan 23 2013

    Publication series

    NameAdvanced Materials Research
    Volume858
    ISSN (Print)1022-6680

    Other

    Other5th Regional Conference on Materials Engineering and the 5th Regional Conference on Natural Resources and Materials 2013, RCM5 and RCNRM5 2013
    CountryMalaysia
    Period1/22/131/23/13

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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  • Cite this

    Promros, N., Iwasaki, R., Funasaki, S., Yamashita, K., Li, C., & Yoshitake, T. (2014). Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition. In Frontiers in Materials and Minerals Engineering (pp. 171-176). (Advanced Materials Research; Vol. 858). https://doi.org/10.4028/www.scientific.net/AMR.858.171