Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrate

Koji Ueda, Taizoh Sadoh, Yuichiro Ando, Takahumi Jonishi, Kazumasa Narumi, Yoshihito Maeda, Masanobu Miyao

Research output: Contribution to journalArticle

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Abstract

Influences of growth temperature on low-temperature (60-400 °C) molecular beam epitaxy of the ferromagnetic silicide Fe3Si layer on Ge substrates were investigated. X-ray diffraction and reflective high-energy electron diffraction measurements suggested that Fe3Si layers were epitaxially grown on Ge at a temperature between 60 and 300 °C, while another phase layer was epitaxially grown at 400 °C. Rutherford backscattering spectroscopy measurements revealed that Ge atoms began to diffuse into the Fe3Si layers above 300 °C, and the FeSiGe layer was formed at 400 °C. As a result, very low value (4.0%) of the minimum scattering yield (χmin) of the Fe3Si layers was obtained at 130 °C. Transmission electron microscopy measurements indicated that the interface of Fe3Si and Ge was atomically flat. In addition, analysis of the electron diffraction patterns of epitaxial Fe3Si layers confirmed the formation of DO3-type Fe3Si.

Original languageEnglish
Pages (from-to)422-424
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - Nov 3 2008

Fingerprint

Epitaxial growth
Substrates
High energy electron diffraction
Epitaxial layers
Rutherford backscattering spectroscopy
Growth temperature
Molecular beam epitaxy
Electron diffraction
Temperature
Diffraction patterns
temperature
Scattering
Transmission electron microscopy
electron diffraction
X ray diffraction
Atoms
high energy electrons
backscattering
molecular beam epitaxy
diffraction patterns

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrate. / Ueda, Koji; Sadoh, Taizoh; Ando, Yuichiro; Jonishi, Takahumi; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu.

In: Thin Solid Films, Vol. 517, No. 1, 03.11.2008, p. 422-424.

Research output: Contribution to journalArticle

Ueda, K, Sadoh, T, Ando, Y, Jonishi, T, Narumi, K, Maeda, Y & Miyao, M 2008, 'Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrate', Thin Solid Films, vol. 517, no. 1, pp. 422-424. https://doi.org/10.1016/j.tsf.2008.08.110
Ueda, Koji ; Sadoh, Taizoh ; Ando, Yuichiro ; Jonishi, Takahumi ; Narumi, Kazumasa ; Maeda, Yoshihito ; Miyao, Masanobu. / Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrate. In: Thin Solid Films. 2008 ; Vol. 517, No. 1. pp. 422-424.
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AU - Sadoh, Taizoh

AU - Ando, Yuichiro

AU - Jonishi, Takahumi

AU - Narumi, Kazumasa

AU - Maeda, Yoshihito

AU - Miyao, Masanobu

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AB - Influences of growth temperature on low-temperature (60-400 °C) molecular beam epitaxy of the ferromagnetic silicide Fe3Si layer on Ge substrates were investigated. X-ray diffraction and reflective high-energy electron diffraction measurements suggested that Fe3Si layers were epitaxially grown on Ge at a temperature between 60 and 300 °C, while another phase layer was epitaxially grown at 400 °C. Rutherford backscattering spectroscopy measurements revealed that Ge atoms began to diffuse into the Fe3Si layers above 300 °C, and the FeSiGe layer was formed at 400 °C. As a result, very low value (4.0%) of the minimum scattering yield (χmin) of the Fe3Si layers was obtained at 130 °C. Transmission electron microscopy measurements indicated that the interface of Fe3Si and Ge was atomically flat. In addition, analysis of the electron diffraction patterns of epitaxial Fe3Si layers confirmed the formation of DO3-type Fe3Si.

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