Temperature dependent epitaxial growth of ferromagnetic silicide Fe₃Si on Ge substrate

Engineering & Materials Science

• Epitaxial growth 100%
• Silicides 97%
• Substrates 50%
• Rutherford backscattering spectroscopy 44%
• High energy electron diffraction 40%
• Growth temperature 38%
• Molecular beam epitaxy 36%
• Epitaxial films 36%
• Diffraction patterns 33%
• Electron diffraction 31%
• Temperature 28%
• Atoms 24%
• Transmission electron microscopy 24%
• X ray diffraction 23%
• Scattering 22%

Chemical Compounds

• Epitaxial Growth 86%
• Electron Diffraction 72%
• Molecular Beam Epitaxy 51%
• Rutherford Backscattering Spectroscopy 45%
• Transmission Electron Microscopy 23%
• X-Ray Diffraction 17%
• Reaction Yield 14%

Physics & Astronomy

• silicides 73%
• temperature 21%
• electron diffraction 17%
• high energy electrons 10%
• backscattering 9%
• molecular beam epitaxy 8%
• diffraction patterns 8%
• transmission electron microscopy 6%
• diffraction 5%
• spectroscopy 5%
• scattering 5%
• atoms 5%