Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate

Hiroshi Kanno, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

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Abstract

Metal-induced lateral crystallization (MILC) of amorphous SiGe films on Si O2 has been investigated as a function of Ge fraction (0%-100%) and annealing temperature (320-550 °C). High temperature annealing (>500 °C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400 °C). As a result, large poly-SiGe regions (>20 μm) were observed around Ni patterns even for high Ge fractions (>70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%-100%).

Original languageEnglish
Article number182120
JournalApplied Physics Letters
Volume89
Issue number18
DOIs
Publication statusPublished - Nov 13 2006

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crystallization
metals
annealing
nucleation
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate. / Kanno, Hiroshi; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 89, No. 18, 182120, 13.11.2006.

Research output: Contribution to journalArticle

@article{218584f0f15047a3abfd5ebfe44bed67,
title = "Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate",
abstract = "Metal-induced lateral crystallization (MILC) of amorphous SiGe films on Si O2 has been investigated as a function of Ge fraction (0{\%}-100{\%}) and annealing temperature (320-550 °C). High temperature annealing (>500 °C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70{\%}). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400 °C). As a result, large poly-SiGe regions (>20 μm) were observed around Ni patterns even for high Ge fractions (>70{\%}). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0{\%}-100{\%}).",
author = "Hiroshi Kanno and Kaoru Toko and Taizoh Sadoh and Masanobu Miyao",
year = "2006",
month = "11",
day = "13",
doi = "10.1063/1.2374849",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

TY - JOUR

T1 - Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate

AU - Kanno, Hiroshi

AU - Toko, Kaoru

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2006/11/13

Y1 - 2006/11/13

N2 - Metal-induced lateral crystallization (MILC) of amorphous SiGe films on Si O2 has been investigated as a function of Ge fraction (0%-100%) and annealing temperature (320-550 °C). High temperature annealing (>500 °C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400 °C). As a result, large poly-SiGe regions (>20 μm) were observed around Ni patterns even for high Ge fractions (>70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%-100%).

AB - Metal-induced lateral crystallization (MILC) of amorphous SiGe films on Si O2 has been investigated as a function of Ge fraction (0%-100%) and annealing temperature (320-550 °C). High temperature annealing (>500 °C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400 °C). As a result, large poly-SiGe regions (>20 μm) were observed around Ni patterns even for high Ge fractions (>70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%-100%).

UR - http://www.scopus.com/inward/record.url?scp=33750712063&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750712063&partnerID=8YFLogxK

U2 - 10.1063/1.2374849

DO - 10.1063/1.2374849

M3 - Article

AN - SCOPUS:33750712063

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 182120

ER -