Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate

Hiroshi Kanno, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

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73 Citations (Scopus)

Abstract

Metal-induced lateral crystallization (MILC) of amorphous SiGe films on Si O2 has been investigated as a function of Ge fraction (0%-100%) and annealing temperature (320-550 °C). High temperature annealing (>500 °C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400 °C). As a result, large poly-SiGe regions (>20 μm) were observed around Ni patterns even for high Ge fractions (>70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%-100%).

Original languageEnglish
Article number182120
JournalApplied Physics Letters
Volume89
Issue number18
DOIs
Publication statusPublished - Nov 13 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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