Temperature gradient effect on SiC epitaxy in liquid phase

Muhammad Nasir Khan, Shinichi Nishizawa, Wook Bahng, Kazuo Arai

Research output: Contribution to journalArticle

Abstract

Epitaxial growth of 6H-SiC was carried out on 6H-SiC Acheson seed crystals in the silicon melt using closed carbon crucible. The growth was carried out in the temperature range 1500-1700 °C. The geometry was specific one, such that epitaxial layer growth occurred simultaneously on both faces of seed crystal under similar growth conditions. We have measured the growth rate and studied the surface morphology of these grown layers. The temperature gradient within the melt seems to play a dominant role in the growth mechanism in liquid phase and also results in a better surface morphology of the grown layers.

Original languageEnglish
JournalMaterials Science Forum
Volume338
Publication statusPublished - 2000
Externally publishedYes

Fingerprint

Epitaxial growth
Thermal gradients
epitaxy
temperature gradients
liquid phases
Liquids
Surface morphology
Crystals
seeds
Crucibles
Epitaxial layers
Silicon
Carbon
crucibles
crystals
Geometry
carbon
silicon
geometry
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Temperature gradient effect on SiC epitaxy in liquid phase. / Khan, Muhammad Nasir; Nishizawa, Shinichi; Bahng, Wook; Arai, Kazuo.

In: Materials Science Forum, Vol. 338, 2000.

Research output: Contribution to journalArticle

Khan, Muhammad Nasir ; Nishizawa, Shinichi ; Bahng, Wook ; Arai, Kazuo. / Temperature gradient effect on SiC epitaxy in liquid phase. In: Materials Science Forum. 2000 ; Vol. 338.
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