Temperature gradient effect on SiC epitaxy in liquid phase

Muhammad Nasir Khan, Shin Ichi Nishizawa, Wook Bahng, Kazuo Arai

Research output: Contribution to journalConference articlepeer-review

Abstract

Epitaxial growth of 6H-SiC was carried out on 6H-SiC Acheson seed crystals in the silicon melt using closed carbon crucible. The growth was carried out in the temperature range 1500-1700 °C. The geometry was specific one, such that epitaxial layer growth occurred simultaneously on both faces of seed crystal under similar growth conditions. We have measured the growth rate and studied the surface morphology of these grown layers. The temperature gradient within the melt seems to play a dominant role in the growth mechanism in liquid phase and also results in a better surface morphology of the grown layers.

Original languageEnglish
Pages (from-to)I/-
JournalMaterials Science Forum
Volume338
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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