Temperature gradient effect on SiC epitaxy in liquid phase

Muhammad Nasir Khan; Shin Ichi Nishizawa; Wook Bahng; Kazuo Arai

Temperature gradient effect on SiC epitaxy in liquid phase

Muhammad Nasir Khan, Shin Ichi Nishizawa, Wook Bahng, Kazuo Arai

Research output: Contribution to journal › Conference article › peer-review

Abstract

Epitaxial growth of 6H-SiC was carried out on 6H-SiC Acheson seed crystals in the silicon melt using closed carbon crucible. The growth was carried out in the temperature range 1500-1700 °C. The geometry was specific one, such that epitaxial layer growth occurred simultaneously on both faces of seed crystal under similar growth conditions. We have measured the growth rate and studied the surface morphology of these grown layers. The temperature gradient within the melt seems to play a dominant role in the growth mechanism in liquid phase and also results in a better surface morphology of the grown layers.

Original language	English
Pages (from-to)	I/-
Journal	Materials Science Forum
Volume	338
Publication status	Published - 2000
Externally published	Yes
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Temperature gradient effect on SiC epitaxy in liquid phase",

abstract = "Epitaxial growth of 6H-SiC was carried out on 6H-SiC Acheson seed crystals in the silicon melt using closed carbon crucible. The growth was carried out in the temperature range 1500-1700 °C. The geometry was specific one, such that epitaxial layer growth occurred simultaneously on both faces of seed crystal under similar growth conditions. We have measured the growth rate and studied the surface morphology of these grown layers. The temperature gradient within the melt seems to play a dominant role in the growth mechanism in liquid phase and also results in a better surface morphology of the grown layers.",

author = "Khan, {Muhammad Nasir} and Nishizawa, {Shin Ichi} and Wook Bahng and Kazuo Arai",

note = "Copyright: Copyright 2005 Elsevier Science B.V., Amsterdam. All rights reserved.; ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

year = "2000",

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volume = "338",

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journal = "Materials Science Forum",

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TY - JOUR

T1 - Temperature gradient effect on SiC epitaxy in liquid phase

AU - Khan, Muhammad Nasir

AU - Nishizawa, Shin Ichi

AU - Bahng, Wook

AU - Arai, Kazuo

PY - 2000

Y1 - 2000

N2 - Epitaxial growth of 6H-SiC was carried out on 6H-SiC Acheson seed crystals in the silicon melt using closed carbon crucible. The growth was carried out in the temperature range 1500-1700 °C. The geometry was specific one, such that epitaxial layer growth occurred simultaneously on both faces of seed crystal under similar growth conditions. We have measured the growth rate and studied the surface morphology of these grown layers. The temperature gradient within the melt seems to play a dominant role in the growth mechanism in liquid phase and also results in a better surface morphology of the grown layers.

AB - Epitaxial growth of 6H-SiC was carried out on 6H-SiC Acheson seed crystals in the silicon melt using closed carbon crucible. The growth was carried out in the temperature range 1500-1700 °C. The geometry was specific one, such that epitaxial layer growth occurred simultaneously on both faces of seed crystal under similar growth conditions. We have measured the growth rate and studied the surface morphology of these grown layers. The temperature gradient within the melt seems to play a dominant role in the growth mechanism in liquid phase and also results in a better surface morphology of the grown layers.

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M3 - Conference article

AN - SCOPUS:12944281816

SN - 0255-5476

VL - 338

SP - I/-

JO - Materials Science Forum

JF - Materials Science Forum

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Temperature gradient effect on SiC epitaxy in liquid phase

Abstract

All Science Journal Classification (ASJC) codes

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