Temperature-independent electron tunneling injection in tris (8-hydroxyquinoline) aluminum thin film from high-work-function gold electrode

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Abstract

We fabricated electron-only tris (8-hydroxyquinoline) aluminum (Alq3) single-layer devices with a device structure of glass substrate/MgAg anode (100 nm)/Alq3 layer (100 nm)/metal cathode (100 nm), and systematically varied the work functions (WF) of the metal cathodes from WF = - 1.9 (Cs) to - 2.9 (Ca), - 3.8 (Mg), - 4.4 (Al), - 4.6 (Ag), and - 5.2 eV (Au) to investigate how electron injection barriers at the cathode/Alq3 interfaces influence their current density-voltage (J-V) characteristics. We found that current densities at a certain driving voltage decrease and the temperature dependence of J-V characteristics of the devices gradually becomes weaker as the work functions of the metal cathodes are decreased. The device with the highest-work-function Au cathode exhibited virtually temperature-independent J-V characteristics, suggesting that a current flow mechanism of this device is mainly controlled by electron tunneling injection at the Au/Alq3 interface.

Original languageEnglish
Pages (from-to)5069-5074
Number of pages6
JournalThin Solid Films
Volume516
Issue number15
DOIs
Publication statusPublished - Jun 2 2008

Fingerprint

Electron tunneling
electron tunneling
Gold
Cathodes
cathodes
injection
gold
aluminum
Aluminum
Thin films
Electrodes
electrodes
thin films
Metals
Current density
Temperature
temperature
metals
current density
Electron injection

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Temperature-independent electron tunneling injection in tris (8-hydroxyquinoline) aluminum thin film from high-work-function gold electrode",
abstract = "We fabricated electron-only tris (8-hydroxyquinoline) aluminum (Alq3) single-layer devices with a device structure of glass substrate/MgAg anode (100 nm)/Alq3 layer (100 nm)/metal cathode (100 nm), and systematically varied the work functions (WF) of the metal cathodes from WF = - 1.9 (Cs) to - 2.9 (Ca), - 3.8 (Mg), - 4.4 (Al), - 4.6 (Ag), and - 5.2 eV (Au) to investigate how electron injection barriers at the cathode/Alq3 interfaces influence their current density-voltage (J-V) characteristics. We found that current densities at a certain driving voltage decrease and the temperature dependence of J-V characteristics of the devices gradually becomes weaker as the work functions of the metal cathodes are decreased. The device with the highest-work-function Au cathode exhibited virtually temperature-independent J-V characteristics, suggesting that a current flow mechanism of this device is mainly controlled by electron tunneling injection at the Au/Alq3 interface.",
author = "Toshinori Matsusima and Chihaya Adachi",
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TY - JOUR

T1 - Temperature-independent electron tunneling injection in tris (8-hydroxyquinoline) aluminum thin film from high-work-function gold electrode

AU - Matsusima, Toshinori

AU - Adachi, Chihaya

PY - 2008/6/2

Y1 - 2008/6/2

N2 - We fabricated electron-only tris (8-hydroxyquinoline) aluminum (Alq3) single-layer devices with a device structure of glass substrate/MgAg anode (100 nm)/Alq3 layer (100 nm)/metal cathode (100 nm), and systematically varied the work functions (WF) of the metal cathodes from WF = - 1.9 (Cs) to - 2.9 (Ca), - 3.8 (Mg), - 4.4 (Al), - 4.6 (Ag), and - 5.2 eV (Au) to investigate how electron injection barriers at the cathode/Alq3 interfaces influence their current density-voltage (J-V) characteristics. We found that current densities at a certain driving voltage decrease and the temperature dependence of J-V characteristics of the devices gradually becomes weaker as the work functions of the metal cathodes are decreased. The device with the highest-work-function Au cathode exhibited virtually temperature-independent J-V characteristics, suggesting that a current flow mechanism of this device is mainly controlled by electron tunneling injection at the Au/Alq3 interface.

AB - We fabricated electron-only tris (8-hydroxyquinoline) aluminum (Alq3) single-layer devices with a device structure of glass substrate/MgAg anode (100 nm)/Alq3 layer (100 nm)/metal cathode (100 nm), and systematically varied the work functions (WF) of the metal cathodes from WF = - 1.9 (Cs) to - 2.9 (Ca), - 3.8 (Mg), - 4.4 (Al), - 4.6 (Ag), and - 5.2 eV (Au) to investigate how electron injection barriers at the cathode/Alq3 interfaces influence their current density-voltage (J-V) characteristics. We found that current densities at a certain driving voltage decrease and the temperature dependence of J-V characteristics of the devices gradually becomes weaker as the work functions of the metal cathodes are decreased. The device with the highest-work-function Au cathode exhibited virtually temperature-independent J-V characteristics, suggesting that a current flow mechanism of this device is mainly controlled by electron tunneling injection at the Au/Alq3 interface.

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U2 - 10.1016/j.tsf.2008.02.012

DO - 10.1016/j.tsf.2008.02.012

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