Temperature-independent electron tunneling injection in tris (8-hydroxyquinoline) aluminum thin film from high-work-function gold electrode

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Abstract

We fabricated electron-only tris (8-hydroxyquinoline) aluminum (Alq3) single-layer devices with a device structure of glass substrate/MgAg anode (100 nm)/Alq3 layer (100 nm)/metal cathode (100 nm), and systematically varied the work functions (WF) of the metal cathodes from WF = - 1.9 (Cs) to - 2.9 (Ca), - 3.8 (Mg), - 4.4 (Al), - 4.6 (Ag), and - 5.2 eV (Au) to investigate how electron injection barriers at the cathode/Alq3 interfaces influence their current density-voltage (J-V) characteristics. We found that current densities at a certain driving voltage decrease and the temperature dependence of J-V characteristics of the devices gradually becomes weaker as the work functions of the metal cathodes are decreased. The device with the highest-work-function Au cathode exhibited virtually temperature-independent J-V characteristics, suggesting that a current flow mechanism of this device is mainly controlled by electron tunneling injection at the Au/Alq3 interface.

Original languageEnglish
Pages (from-to)5069-5074
Number of pages6
JournalThin Solid Films
Volume516
Issue number15
DOIs
Publication statusPublished - Jun 2 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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