Temperature-independent two-dimensional hole gas confined at GaN/AlGaN heterointerface

Akira Nakajima, Pucheng Liu, Masahiko Ogura, Toshiharu Makino, Shin Ichi Nishizawa, Satoshi Yamasaki, Hiromichi Ohashi, Kuniyuki Kakushima, Hiroshi Iwai

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The electrical properties at the GaN(0001)/AlGaN(0001) heterointerface have been investigated. Capacitance-voltage measurement and theoretical simulation results verify the existence of a two-dimensional (2D) hole gas, which is highly confined to the GaN/AlGaN interface with a peak carrier density of over 10 19 cm-3. Hall-effect measurements in the 80-460 K temperature range reveal that the 2D hole gas has zero activation energy and positive sheet-resistance temperature coefficients.

Original languageEnglish
Article number091002
JournalApplied Physics Express
Issue number9
Publication statusPublished - Sep 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Nakajima, A., Liu, P., Ogura, M., Makino, T., Nishizawa, S. I., Yamasaki, S., Ohashi, H., Kakushima, K., & Iwai, H. (2013). Temperature-independent two-dimensional hole gas confined at GaN/AlGaN heterointerface. Applied Physics Express, 6(9), [091002]. https://doi.org/10.7567/APEX.6.091002