Temperature-induced valence transition in EuNi2(Si 0.20Ge0.80)2 studied by hard X-ray photoemission spectroscopy

Kazuya Yamamoto, Nozomu Kamakura, Munetaka Taguchi, Ashish Chainani, Yasutaka Takata, Koji Horiba, Shik Shin, Eiji Ikenaga, Kojiro Mimura, Masayuki Shiga, Hirofumi Wada, Hirofumi Namatame, Masaki Taniguchi, Mitsuhiro Awaji, Akihisa Takeuchi, Yoshinori Nishino, Daigo Miwa, Kenji Tamasaku, Tetsuya Ishikawa, Keisuke Kobayashi

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Abstract

The temperature-induced mixed valence transition in EuNi 2(Si0.20Ge0.80)2 has been investigated by hard X-ray (5940 eV) photoemission spectroscopy (HX-PES) for fractured surfaces, with a probing depth larger than 5 nm. The Eu 3d core-level states are studied below and above the critical valence transition temperature, Tv = 80 K. The HX-PES spectra at 40 and 120 K show the mixed valence transition, with clear changes in the divalent and trivalent Eu 3d chemically shifted features. The Eu 3d HX-PES spectra indicate a mean valence of 2.70 ± 0.03 at 40 K which changes to 2.40 ± 0.03 at 120 K, in good accordance with the results of bulk EuIII-edge X-ray absorption spectroscopy measurements.

Original languageEnglish
Pages (from-to)553-555
Number of pages3
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume144-147
DOIs
Publication statusPublished - Jun 1 2005

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X ray absorption spectroscopy
Core levels
Photoelectron spectroscopy
X ray spectroscopy
Superconducting transition temperature
photoelectric emission
valence
X rays
spectroscopy
x rays
Temperature
temperature
absorption spectroscopy
transition temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

Cite this

Temperature-induced valence transition in EuNi2(Si 0.20Ge0.80)2 studied by hard X-ray photoemission spectroscopy. / Yamamoto, Kazuya; Kamakura, Nozomu; Taguchi, Munetaka; Chainani, Ashish; Takata, Yasutaka; Horiba, Koji; Shin, Shik; Ikenaga, Eiji; Mimura, Kojiro; Shiga, Masayuki; Wada, Hirofumi; Namatame, Hirofumi; Taniguchi, Masaki; Awaji, Mitsuhiro; Takeuchi, Akihisa; Nishino, Yoshinori; Miwa, Daigo; Tamasaku, Kenji; Ishikawa, Tetsuya; Kobayashi, Keisuke.

In: Journal of Electron Spectroscopy and Related Phenomena, Vol. 144-147, 01.06.2005, p. 553-555.

Research output: Contribution to journalArticle

Yamamoto, K, Kamakura, N, Taguchi, M, Chainani, A, Takata, Y, Horiba, K, Shin, S, Ikenaga, E, Mimura, K, Shiga, M, Wada, H, Namatame, H, Taniguchi, M, Awaji, M, Takeuchi, A, Nishino, Y, Miwa, D, Tamasaku, K, Ishikawa, T & Kobayashi, K 2005, 'Temperature-induced valence transition in EuNi2(Si 0.20Ge0.80)2 studied by hard X-ray photoemission spectroscopy', Journal of Electron Spectroscopy and Related Phenomena, vol. 144-147, pp. 553-555. https://doi.org/10.1016/j.elspec.2005.01.089
Yamamoto, Kazuya ; Kamakura, Nozomu ; Taguchi, Munetaka ; Chainani, Ashish ; Takata, Yasutaka ; Horiba, Koji ; Shin, Shik ; Ikenaga, Eiji ; Mimura, Kojiro ; Shiga, Masayuki ; Wada, Hirofumi ; Namatame, Hirofumi ; Taniguchi, Masaki ; Awaji, Mitsuhiro ; Takeuchi, Akihisa ; Nishino, Yoshinori ; Miwa, Daigo ; Tamasaku, Kenji ; Ishikawa, Tetsuya ; Kobayashi, Keisuke. / Temperature-induced valence transition in EuNi2(Si 0.20Ge0.80)2 studied by hard X-ray photoemission spectroscopy. In: Journal of Electron Spectroscopy and Related Phenomena. 2005 ; Vol. 144-147. pp. 553-555.
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abstract = "The temperature-induced mixed valence transition in EuNi 2(Si0.20Ge0.80)2 has been investigated by hard X-ray (5940 eV) photoemission spectroscopy (HX-PES) for fractured surfaces, with a probing depth larger than 5 nm. The Eu 3d core-level states are studied below and above the critical valence transition temperature, Tv = 80 K. The HX-PES spectra at 40 and 120 K show the mixed valence transition, with clear changes in the divalent and trivalent Eu 3d chemically shifted features. The Eu 3d HX-PES spectra indicate a mean valence of 2.70 ± 0.03 at 40 K which changes to 2.40 ± 0.03 at 120 K, in good accordance with the results of bulk EuIII-edge X-ray absorption spectroscopy measurements.",
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AU - Chainani, Ashish

AU - Takata, Yasutaka

AU - Horiba, Koji

AU - Shin, Shik

AU - Ikenaga, Eiji

AU - Mimura, Kojiro

AU - Shiga, Masayuki

AU - Wada, Hirofumi

AU - Namatame, Hirofumi

AU - Taniguchi, Masaki

AU - Awaji, Mitsuhiro

AU - Takeuchi, Akihisa

AU - Nishino, Yoshinori

AU - Miwa, Daigo

AU - Tamasaku, Kenji

AU - Ishikawa, Tetsuya

AU - Kobayashi, Keisuke

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AB - The temperature-induced mixed valence transition in EuNi 2(Si0.20Ge0.80)2 has been investigated by hard X-ray (5940 eV) photoemission spectroscopy (HX-PES) for fractured surfaces, with a probing depth larger than 5 nm. The Eu 3d core-level states are studied below and above the critical valence transition temperature, Tv = 80 K. The HX-PES spectra at 40 and 120 K show the mixed valence transition, with clear changes in the divalent and trivalent Eu 3d chemically shifted features. The Eu 3d HX-PES spectra indicate a mean valence of 2.70 ± 0.03 at 40 K which changes to 2.40 ± 0.03 at 120 K, in good accordance with the results of bulk EuIII-edge X-ray absorption spectroscopy measurements.

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