Temperature-Induced Valence Transition of EuNi2 (81 0.25Ge0.75,75)2 Studied by Eu 4d-4f Resonant Photoemission and Optical Conductivity

Shin Ichi Kimura, Mitsuru Okuno, Hideki Iwata, Tomohiko Saitoh, Taichi Okuda, Ayumi Harasawa, Toyohiko Kinoshita, Akihiro Mltsuda, Hirofumi Wada, Masayuki Shiga

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Eu 4d-4f resonant photoemission and optical reflectivity measurements of a temperature- induced valence transition material, EuNi2(Si0.25Ge 0.75)2, have been performed at several temperatures. The valence transition was observed and the mean valence was evaluated to be 2.37 ± 0.02 and 2.75 ± 0.25 below and above the valence transition temperature, respectively. The mixing between the Ni 3d conduction band and the Eu3+ 4/ hole becomes weak as the temperature increases, showing the valence transition from Eu3+ to Eu2+.

Original languageEnglish
Pages (from-to)255-257
Number of pages3
Journaljournal of the physical society of japan
Issue numberSUPPL.
Publication statusPublished - 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


Dive into the research topics of 'Temperature-Induced Valence Transition of EuNi<sub>2</sub> (81 <sub>0.25</sub>Ge<sub>0.75</sub>,75)<sub>2</sub> Studied by Eu 4d-4f Resonant Photoemission and Optical Conductivity'. Together they form a unique fingerprint.

Cite this