Temperature-Induced Valence Transition of EuNi2 (81 0.25Ge0.75,75)2 Studied by Eu 4d-4f Resonant Photoemission and Optical Conductivity

Shin Ichi Kimura; Mitsuru Okuno; Hideki Iwata; Tomohiko Saitoh; Taichi Okuda; Ayumi Harasawa; Toyohiko Kinoshita; Akihiro Mltsuda; Hirofumi Wada; Masayuki Shiga

doi:10.1143/jpsjs.71s.255

Temperature-Induced Valence Transition of EuNi₂ (81 _0.25Ge_0.75,75)₂ Studied by Eu 4d-4f Resonant Photoemission and Optical Conductivity

Shin Ichi Kimura, Mitsuru Okuno, Hideki Iwata, Tomohiko Saitoh, Taichi Okuda, Ayumi Harasawa, Toyohiko Kinoshita, Akihiro Mltsuda, Hirofumi Wada, Masayuki Shiga

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Eu 4d-4f resonant photoemission and optical reflectivity measurements of a temperature- induced valence transition material, EuNi2(Si_0.25Ge _0.75)₂, have been performed at several temperatures. The valence transition was observed and the mean valence was evaluated to be 2.37 ± 0.02 and 2.75 ± 0.25 below and above the valence transition temperature, respectively. The mixing between the Ni 3d conduction band and the Eu³⁺ 4/ hole becomes weak as the temperature increases, showing the valence transition from Eu³⁺ to Eu²⁺.

Original language	English
Pages (from-to)	255-257
Number of pages	3
Journal	journal of the physical society of japan
Volume	71
Issue number	SUPPL.
DOIs	https://doi.org/10.1143/jpsjs.71s.255
Publication status	Published - 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1143/jpsjs.71s.255

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Temperature-Induced Valence Transition of EuNi₂ (81 _0.25Ge_0.75,75)₂ Studied by Eu 4d-4f Resonant Photoemission and Optical Conductivity. / Kimura, Shin Ichi; Okuno, Mitsuru; Iwata, Hideki; Saitoh, Tomohiko; Okuda, Taichi; Harasawa, Ayumi; Kinoshita, Toyohiko; Mltsuda, Akihiro; Wada, Hirofumi; Shiga, Masayuki.

In: journal of the physical society of japan, Vol. 71, No. SUPPL., 2002, p. 255-257.

Research output: Contribution to journal › Article › peer-review

Kimura, Shin Ichi ; Okuno, Mitsuru ; Iwata, Hideki ; Saitoh, Tomohiko ; Okuda, Taichi ; Harasawa, Ayumi ; Kinoshita, Toyohiko ; Mltsuda, Akihiro ; Wada, Hirofumi ; Shiga, Masayuki. / Temperature-Induced Valence Transition of EuNi₂ (81 _0.25Ge_0.75,75)₂ Studied by Eu 4d-4f Resonant Photoemission and Optical Conductivity. In: journal of the physical society of japan. 2002 ; Vol. 71, No. SUPPL. pp. 255-257.

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abstract = "Eu 4d-4f resonant photoemission and optical reflectivity measurements of a temperature- induced valence transition material, EuNi2(Si0.25Ge 0.75)2, have been performed at several temperatures. The valence transition was observed and the mean valence was evaluated to be 2.37 ± 0.02 and 2.75 ± 0.25 below and above the valence transition temperature, respectively. The mixing between the Ni 3d conduction band and the Eu3+ 4/ hole becomes weak as the temperature increases, showing the valence transition from Eu3+ to Eu2+.",

author = "Kimura, {Shin Ichi} and Mitsuru Okuno and Hideki Iwata and Tomohiko Saitoh and Taichi Okuda and Ayumi Harasawa and Toyohiko Kinoshita and Akihiro Mltsuda and Hirofumi Wada and Masayuki Shiga",

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AU - Kimura, Shin Ichi

AU - Okuno, Mitsuru

AU - Iwata, Hideki

AU - Saitoh, Tomohiko

AU - Okuda, Taichi

AU - Harasawa, Ayumi

AU - Kinoshita, Toyohiko

AU - Mltsuda, Akihiro

AU - Wada, Hirofumi

AU - Shiga, Masayuki

PY - 2002

Y1 - 2002

N2 - Eu 4d-4f resonant photoemission and optical reflectivity measurements of a temperature- induced valence transition material, EuNi2(Si0.25Ge 0.75)2, have been performed at several temperatures. The valence transition was observed and the mean valence was evaluated to be 2.37 ± 0.02 and 2.75 ± 0.25 below and above the valence transition temperature, respectively. The mixing between the Ni 3d conduction band and the Eu3+ 4/ hole becomes weak as the temperature increases, showing the valence transition from Eu3+ to Eu2+.

AB - Eu 4d-4f resonant photoemission and optical reflectivity measurements of a temperature- induced valence transition material, EuNi2(Si0.25Ge 0.75)2, have been performed at several temperatures. The valence transition was observed and the mean valence was evaluated to be 2.37 ± 0.02 and 2.75 ± 0.25 below and above the valence transition temperature, respectively. The mixing between the Ni 3d conduction band and the Eu3+ 4/ hole becomes weak as the temperature increases, showing the valence transition from Eu3+ to Eu2+.

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