TY - JOUR
T1 - Temperature-Induced Valence Transition of EuNi2 (81 0.25Ge0.75,75)2 Studied by Eu 4d-4f Resonant Photoemission and Optical Conductivity
AU - Kimura, Shin Ichi
AU - Okuno, Mitsuru
AU - Iwata, Hideki
AU - Saitoh, Tomohiko
AU - Okuda, Taichi
AU - Harasawa, Ayumi
AU - Kinoshita, Toyohiko
AU - Mltsuda, Akihiro
AU - Wada, Hirofumi
AU - Shiga, Masayuki
PY - 2002
Y1 - 2002
N2 - Eu 4d-4f resonant photoemission and optical reflectivity measurements of a temperature- induced valence transition material, EuNi2(Si0.25Ge 0.75)2, have been performed at several temperatures. The valence transition was observed and the mean valence was evaluated to be 2.37 ± 0.02 and 2.75 ± 0.25 below and above the valence transition temperature, respectively. The mixing between the Ni 3d conduction band and the Eu3+ 4/ hole becomes weak as the temperature increases, showing the valence transition from Eu3+ to Eu2+.
AB - Eu 4d-4f resonant photoemission and optical reflectivity measurements of a temperature- induced valence transition material, EuNi2(Si0.25Ge 0.75)2, have been performed at several temperatures. The valence transition was observed and the mean valence was evaluated to be 2.37 ± 0.02 and 2.75 ± 0.25 below and above the valence transition temperature, respectively. The mixing between the Ni 3d conduction band and the Eu3+ 4/ hole becomes weak as the temperature increases, showing the valence transition from Eu3+ to Eu2+.
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U2 - 10.1143/jpsjs.71s.255
DO - 10.1143/jpsjs.71s.255
M3 - Article
AN - SCOPUS:2942559280
VL - 71
SP - 255
EP - 257
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - SUPPL.
ER -