Temperature-induced valence transition of EuPd2Si2 studied by hard x-ray photoelectron spectroscopy

Kojiro Mimura, Takayuki Uozumi, Takahiko Ishizu, Satoru Motonami, Hitoshi Sato, Yuki Utsumi, Shigenori Ueda, Akihiro Mitsuda, Kenya Shimada, Yukihiro Taguchi, Yoshiyuki Yamashita, Hideki Yoshikawa, Hirofumi Namatame, Masaki Taniguchi, Keisuke Kobayashi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We have studied the electronic structure of EuPd2Si2 by hard X-ray photoelectron spectroscopy (HX-PES) from 300 to 20 K. The temperaturedependent HX-PES spectra clearly show the valence transition, namely, the intensities of the divalent and trivalent Eu 3d components are abruptly changed. The change in Eu 3d spectral shape, especially the drastic change in the trivalent Eu 3d feature with temperature, can be explained within the framework of the Anderson model. The peak shift of Pd 3d core level with temperature indicates that the valence electrons of Pd contribute to the temperature-induced valence transition of EuPd2Si2.

Original languageEnglish
Article number05FD03
JournalJapanese journal of applied physics
Volume50
Issue number5 PART 3
DOIs
Publication statusPublished - May 2011

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Temperature-induced valence transition of EuPd<sub>2</sub>Si<sub>2</sub> studied by hard x-ray photoelectron spectroscopy'. Together they form a unique fingerprint.

Cite this