TY - JOUR
T1 - Tetraphenyldibenzoperiflanthene as sensitizer for enhancing the performance in dinaphthothienothiophene-based photovoltaics with and without fullerene
AU - Zheng, Yan Qiong
AU - Potscavage, William J.
AU - Zhang, Jing
AU - Yasuda, Takuma
AU - Wei, Bin
AU - Adachi, Chihaya
N1 - Funding Information:
This work was supported financially by the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) and by the International Institute for Carbon Neutral Energy Research (WPI-I2CNER), sponsored by the MEXT of Japan . It was also supported by Precursory Research for Embryonic Science and Technology (PRESTO) (no. 10111 ) from JST of Japan , and supported by Science and Technology Commission of Shanghai Municipality (Grant no. 15ZR1416600 ), China.
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2015/7/1
Y1 - 2015/7/1
N2 - In this work, various interlayers were inserted between the donor and acceptor in a dinaphthothienothiophene (DNTT)/C60 planar heterojunction (PHJ) to sensitize the performance. The power conversion efficiency is enhanced from 1.16% for the DNTT/C60 PHJ cell to 2.23% by inserting a 5-nm-thick tetraphenyldibenzoperiflanthene (DBP) interlayer because of the greatly improved photocurrent and open-circuit voltage (VOC). To achieve high VOC, fullerene-free PHJs of DNTT/boron subphthalocyanine chloride (SubPc) (donor/acceptor) were fabricated, and VOC is further improved by doping various fractions of DBP into the SubPc layer. The VOC clearly increases from 0.82 V to 1.24 V by 70 wt%-DBP doping and is accompanied by a slight increase in photocurrent. The bipolar transfer characteristics of SubPc and DBP are investigated by field-effect transistors and show that both can transport electrons, indicating their potential as acceptors in photovoltaic devices. When another 5-nm-thick SubPc layer was included in the fullerene-free DNTT/SubPc:DBP PHJ cell, the power conversion efficiency further increases to 1.32%. These results indicate that DBP is a promising sensitizer for enhancing the performance of DNTT-based photovoltaics.
AB - In this work, various interlayers were inserted between the donor and acceptor in a dinaphthothienothiophene (DNTT)/C60 planar heterojunction (PHJ) to sensitize the performance. The power conversion efficiency is enhanced from 1.16% for the DNTT/C60 PHJ cell to 2.23% by inserting a 5-nm-thick tetraphenyldibenzoperiflanthene (DBP) interlayer because of the greatly improved photocurrent and open-circuit voltage (VOC). To achieve high VOC, fullerene-free PHJs of DNTT/boron subphthalocyanine chloride (SubPc) (donor/acceptor) were fabricated, and VOC is further improved by doping various fractions of DBP into the SubPc layer. The VOC clearly increases from 0.82 V to 1.24 V by 70 wt%-DBP doping and is accompanied by a slight increase in photocurrent. The bipolar transfer characteristics of SubPc and DBP are investigated by field-effect transistors and show that both can transport electrons, indicating their potential as acceptors in photovoltaic devices. When another 5-nm-thick SubPc layer was included in the fullerene-free DNTT/SubPc:DBP PHJ cell, the power conversion efficiency further increases to 1.32%. These results indicate that DBP is a promising sensitizer for enhancing the performance of DNTT-based photovoltaics.
UR - http://www.scopus.com/inward/record.url?scp=84927950670&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84927950670&partnerID=8YFLogxK
U2 - 10.1016/j.synthmet.2015.04.002
DO - 10.1016/j.synthmet.2015.04.002
M3 - Article
AN - SCOPUS:84927950670
VL - 205
SP - 121
EP - 126
JO - Synthetic Metals
JF - Synthetic Metals
SN - 0379-6779
ER -
