The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate

Sethavut Duangchan, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima, Akiyoshi Baba

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This research aims to show the benefits of using SiN as a buried-oxide (BOX) in germanium-on-insulator (GOI) substrate. The substrate is fabricated by using a direct bonding method with a smart-cut technology. Using SiN as a BOX layer instead of conventinal SiO2 yields the tensile strain of the substrate is 1.3%-2% approximately, which affects to enhance the mobility of the Ge-based device.

Original languageEnglish
Title of host publication4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728125381
DOIs
Publication statusPublished - Apr 2020
Event4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Penang, Malaysia
Duration: Apr 6 2020Apr 21 2020

Publication series

Name4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings

Conference

Conference4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
CountryMalaysia
CityPenang
Period4/6/204/21/20

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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