Silicon single crystals are usually grown from melt in a rotating crucible by the Czochralski method. The purpose of the present paper is to make the velocity profile in the azimuthal direction clear. The flow velocity profile has been obtained from numerical simulation and flow visualization by X-ray radiography. Numerical simulation and experimental flow visualization have made it clear that the flow in the azimuthal direction is modulated by the Coriolis force because the radial flow velocity is relatively high. The azimuthal flow velocity near a crucible wall has a smaller (or negative) value compared with the angular velocity of the crucible, while the flow with a larger azimuthal velocity exists in the center of the crucible.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Mechanical Engineering
- Fluid Flow and Transfer Processes