The effect of boron/antimony on the brittle-to-ductile transition in silicon single crystals

Masaki Tanaka, Keiki Maeno, Kenji Higashida

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The brittle-to-ductile transition (BDT) in boron or antimony doped Czochralski (CZ) silicon single crystals was investigated by three-point bending. The temperature dependence of the apparent fracture toughness was measured in three different crosshead speeds, indicating that the BDT temperature in boron doped silicon is the same as that in non-doped one while the BDT temperature in antimony doped silicon is lower than that in non-doped one. The activation energy was obtained from the deformation rate dependence of the BDT temperature, suggesting that the dislocation velocity in boron doped silicon is the same as that in non-doped while the dislocation velocity in antimony doped is larger than that in non-doped one.

Original languageEnglish
Pages (from-to)1206-1209
Number of pages4
JournalMaterials Transactions
Volume51
Issue number7
DOIs
Publication statusPublished - Jul 1 2010

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Antimony
Boron
Silicon
antimony
boron
Single crystals
Superconducting transition temperature
transition temperature
single crystals
silicon
fracture strength
Fracture toughness
Activation energy
activation energy
temperature dependence
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

The effect of boron/antimony on the brittle-to-ductile transition in silicon single crystals. / Tanaka, Masaki; Maeno, Keiki; Higashida, Kenji.

In: Materials Transactions, Vol. 51, No. 7, 01.07.2010, p. 1206-1209.

Research output: Contribution to journalArticle

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