The effect of dopants on the brittle-to-ductile transition in silicon single crystals

Youn Jeong Hong, Masaki Tanaka, Keiki Maeno, Kenji Higashida

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The brittle-to-ductile transition (BDT) in boron, antimony and arsenic doped Cz silicon crystals has been experimentally studied, respectively. The BDT temperatures in antimony and arsenic doped silicon wafers are lower than that in a non-doped wafer while the BDT temperature in a boron doped wafer is almost the same as that in the non-doped wafer. The activation energy was obtained from the strain rate dependence of the BDT temperature. It was found that the values of the activation energy in the antimony and arsenic doped wafers are lower than that in the non-doped and boron doped wafers, indicating that the dislocation velocity in the antimony and arsenic doped silicon is faster than that in the non-doped while the dislocation velocity in the boron doped is the same as that in the non-doped. The effect of increasing in dislocation velocity on the BDT temperature was calculated by two-dimensional discrete dislocation dynamics simulations, indicating that the increasing in dislocation velocity decreases the BDT temperature in silicon single crystals.

Original languageEnglish
Article number012141
JournalJournal of Physics: Conference Series
Volume240
DOIs
Publication statusPublished - Jan 1 2010

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wafers
antimony
arsenic
transition temperature
single crystals
boron
silicon
activation energy
strain rate
crystals
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

The effect of dopants on the brittle-to-ductile transition in silicon single crystals. / Hong, Youn Jeong; Tanaka, Masaki; Maeno, Keiki; Higashida, Kenji.

In: Journal of Physics: Conference Series, Vol. 240, 012141, 01.01.2010.

Research output: Contribution to journalArticle

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