The effect of oxygen on the brittle-to-ductile transition in silicon single crystals

Youn Jeong Hong, Masaki Tanaka, Kenji Higashida

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The brittle-to-ductile transition (BDT) in Czochralski (CZ) grown silicon single crystals and floating-zone (FZ) grown silicon single crystals was investigated by three-point bending. The temperature dependence of the apparent fracture toughness was measured in three different cross-head speeds. It was found that the BDT temperature in the CZ silicon crystal was higher than that in FZ silicon crystal, suggesting that the solute oxygen decreases dislocation mobility. However, the activation energies obtained from the strain rate dependence of the BDT temperatures were nearly the same in both the CZ and FZ silicon crystals, indicating that the dislocation mobility is not influenced by the solute oxygen. In this paper, the origin of the difference in the BDT temperature is discussed, focusing the role of the solute oxygen on the dislocation glide.

    Original languageEnglish
    Title of host publicationPRICM7
    Pages1299-1302
    Number of pages4
    DOIs
    Publication statusPublished - Aug 17 2010
    Event7th Pacific Rim International Conference on Advanced Materials and Processing, PRICM-7 - Cairns, QLD, Australia
    Duration: Aug 2 2010Aug 6 2010

    Publication series

    NameMaterials Science Forum
    Volume654-656
    ISSN (Print)0255-5476

    Other

    Other7th Pacific Rim International Conference on Advanced Materials and Processing, PRICM-7
    CountryAustralia
    CityCairns, QLD
    Period8/2/108/6/10

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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