TY - JOUR
T1 - The effect of the H2/(H2 + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H2/C7H8 plasma chemical vapor deposition
AU - Fang, Taojun
AU - Yamaki, Kenji
AU - Koga, Kazunori
AU - Yamashita, Daisuke
AU - Seo, Hyunwoong
AU - Itagaki, Naho
AU - Shiratani, Masaharu
AU - Takenaka, Kosuke
AU - Setsuhara, Yuichi
N1 - Funding Information:
This work was partly supported by JSPS KAKENHI (Grant Number JP16K13922 ) and the Joining and Welding Research Institute of Osaka University . We thank Joshua Yearsley, MS, from Edanz Group ( www.edanzediting.com/ac ) for editing a draft of this manuscript.
PY - 2018/8/30
Y1 - 2018/8/30
N2 - To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H2/(H2 + Ar). By decreasing the gas flow-rate ratio from 55% to 11%, the hydrogen content in the films decreased, and the density of sp3 carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11%, we produced a-C:H films with a high bulk density of 1830 kg/m3 at a high deposition rate of 81.1 nm/min.
AB - To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H2/(H2 + Ar). By decreasing the gas flow-rate ratio from 55% to 11%, the hydrogen content in the films decreased, and the density of sp3 carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11%, we produced a-C:H films with a high bulk density of 1830 kg/m3 at a high deposition rate of 81.1 nm/min.
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U2 - 10.1016/j.tsf.2018.02.035
DO - 10.1016/j.tsf.2018.02.035
M3 - Article
AN - SCOPUS:85042640028
SN - 0040-6090
VL - 660
SP - 891
EP - 898
JO - Thin Solid Films
JF - Thin Solid Films
ER -