The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100)

Mastura Shafinaz Zainal Abidin, Tahsin Morshed, Hironori Chikita, Yuki Kinoshita, Shunpei Muta, Mohammad Anisuzzaman, Jong Hyeok Park, Ryo Matsumura, Mohamad Rusop Mahmood, Taizoh Sadoh, Abdul Manaf Hashim

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Abstract

The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm-1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1-x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

Original languageEnglish
Pages (from-to)1409-1421
Number of pages13
JournalMaterials
Volume7
Issue number2
DOIs
Publication statusPublished - Mar 6 2014

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Melting
Annealing
Chemical analysis
Temperature
Crystal orientation
Contacts (fluid mechanics)
Thermal expansion
Heterojunctions
Molten materials
Crystalline materials
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Abidin, M. S. Z., Morshed, T., Chikita, H., Kinoshita, Y., Muta, S., Anisuzzaman, M., ... Hashim, A. M. (2014). The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100). Materials, 7(2), 1409-1421. https://doi.org/10.3390/ma7021409

The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100). / Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf.

In: Materials, Vol. 7, No. 2, 06.03.2014, p. 1409-1421.

Research output: Contribution to journalArticle

Abidin, MSZ, Morshed, T, Chikita, H, Kinoshita, Y, Muta, S, Anisuzzaman, M, Park, JH, Matsumura, R, Mahmood, MR, Sadoh, T & Hashim, AM 2014, 'The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100)', Materials, vol. 7, no. 2, pp. 1409-1421. https://doi.org/10.3390/ma7021409
Abidin, Mastura Shafinaz Zainal ; Morshed, Tahsin ; Chikita, Hironori ; Kinoshita, Yuki ; Muta, Shunpei ; Anisuzzaman, Mohammad ; Park, Jong Hyeok ; Matsumura, Ryo ; Mahmood, Mohamad Rusop ; Sadoh, Taizoh ; Hashim, Abdul Manaf. / The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100). In: Materials. 2014 ; Vol. 7, No. 2. pp. 1409-1421.
@article{6b4903fc8bcd4ccb9fa451a2cff2e47d,
title = "The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100)",
abstract = "The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm-1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1-x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.",
author = "Abidin, {Mastura Shafinaz Zainal} and Tahsin Morshed and Hironori Chikita and Yuki Kinoshita and Shunpei Muta and Mohammad Anisuzzaman and Park, {Jong Hyeok} and Ryo Matsumura and Mahmood, {Mohamad Rusop} and Taizoh Sadoh and Hashim, {Abdul Manaf}",
year = "2014",
month = "3",
day = "6",
doi = "10.3390/ma7021409",
language = "English",
volume = "7",
pages = "1409--1421",
journal = "Materials",
issn = "1996-1944",
publisher = "MDPI AG",
number = "2",

}

TY - JOUR

T1 - The effects of annealing temperatures on composition and strain in SixGe1-x obtained by melting growth of electrodeposited Ge on Si (100)

AU - Abidin, Mastura Shafinaz Zainal

AU - Morshed, Tahsin

AU - Chikita, Hironori

AU - Kinoshita, Yuki

AU - Muta, Shunpei

AU - Anisuzzaman, Mohammad

AU - Park, Jong Hyeok

AU - Matsumura, Ryo

AU - Mahmood, Mohamad Rusop

AU - Sadoh, Taizoh

AU - Hashim, Abdul Manaf

PY - 2014/3/6

Y1 - 2014/3/6

N2 - The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm-1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1-x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

AB - The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm-1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1-x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

UR - http://www.scopus.com/inward/record.url?scp=84894767803&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894767803&partnerID=8YFLogxK

U2 - 10.3390/ma7021409

DO - 10.3390/ma7021409

M3 - Article

VL - 7

SP - 1409

EP - 1421

JO - Materials

JF - Materials

SN - 1996-1944

IS - 2

ER -