TY - GEN
T1 - The effects of strong oxidizing slurry and processing atmosphere on double-sided CMP of SiC wafer
AU - Yin, Tao
AU - Doi, Toshiro
AU - Kurokawa, Syuhei
AU - Ohnishi, Osamu
AU - Yamazaki, Tsutomu
AU - Wang, Zhida
AU - Tan, Zhe
PY - 2012
Y1 - 2012
N2 - In order to achieve high removal rate and high-quality processing on SiC wafer, we carried out the CMP processing experiment with the new type CMP machine (Bell-jar) by using the slurry with the addition of strong oxidant (KMnO4). It was found that the high speed CMP processing was achieved by controlling the concentration of KMnO4 in the slurry, the pH of slurry and the processing atmosphere. By using the slurry with the addition of KMnO4 of 0.1mol/L, the removal rate was the fastest up to 1019nm/h in the fixed pH of 6. By use of the slurry of pH 3, the removal rate of C-face of SiC wafer was 1695nm/h On the other hand, the fastest removal rate of Si-face of SiC wafer was only 51nm/h by using the slurry whose pH is 7. In the open air atmosphere, the removal rate was 915nm/h, which was higher than that at the higher and lower atmospheric pressure.
AB - In order to achieve high removal rate and high-quality processing on SiC wafer, we carried out the CMP processing experiment with the new type CMP machine (Bell-jar) by using the slurry with the addition of strong oxidant (KMnO4). It was found that the high speed CMP processing was achieved by controlling the concentration of KMnO4 in the slurry, the pH of slurry and the processing atmosphere. By using the slurry with the addition of KMnO4 of 0.1mol/L, the removal rate was the fastest up to 1019nm/h in the fixed pH of 6. By use of the slurry of pH 3, the removal rate of C-face of SiC wafer was 1695nm/h On the other hand, the fastest removal rate of Si-face of SiC wafer was only 51nm/h by using the slurry whose pH is 7. In the open air atmosphere, the removal rate was 915nm/h, which was higher than that at the higher and lower atmospheric pressure.
UR - http://www.scopus.com/inward/record.url?scp=84871081802&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84871081802&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.591-593.1131
DO - 10.4028/www.scientific.net/AMR.591-593.1131
M3 - Conference contribution
AN - SCOPUS:84871081802
SN - 9783037855362
T3 - Advanced Materials Research
SP - 1131
EP - 1134
BT - Manufacturing Engineering and Automation II
T2 - 2012 International Conference on Manufacturing Engineering and Automation, ICMEA 2012
Y2 - 16 November 2012 through 18 November 2012
ER -