The effects of strong oxidizing slurry and processing atmosphere on double-sided CMP of SiC wafer

Tao Yin, Toshiro Doi, Syuhei Kurokawa, Osamu Ohnishi, Tsutomu Yamazaki, Zhida Wang, Zhe Tan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

In order to achieve high removal rate and high-quality processing on SiC wafer, we carried out the CMP processing experiment with the new type CMP machine (Bell-jar) by using the slurry with the addition of strong oxidant (KMnO4). It was found that the high speed CMP processing was achieved by controlling the concentration of KMnO4 in the slurry, the pH of slurry and the processing atmosphere. By using the slurry with the addition of KMnO4 of 0.1mol/L, the removal rate was the fastest up to 1019nm/h in the fixed pH of 6. By use of the slurry of pH 3, the removal rate of C-face of SiC wafer was 1695nm/h On the other hand, the fastest removal rate of Si-face of SiC wafer was only 51nm/h by using the slurry whose pH is 7. In the open air atmosphere, the removal rate was 915nm/h, which was higher than that at the higher and lower atmospheric pressure.

Original languageEnglish
Title of host publicationManufacturing Engineering and Automation II
Pages1131-1134
Number of pages4
DOIs
Publication statusPublished - Dec 19 2012
Event2012 International Conference on Manufacturing Engineering and Automation, ICMEA 2012 - Guangzhou, China
Duration: Nov 16 2012Nov 18 2012

Publication series

NameAdvanced Materials Research
Volume591-593
ISSN (Print)1022-6680

Other

Other2012 International Conference on Manufacturing Engineering and Automation, ICMEA 2012
CountryChina
CityGuangzhou
Period11/16/1211/18/12

Fingerprint

Processing
Oxidants
Atmospheric pressure
Air
Experiments

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Yin, T., Doi, T., Kurokawa, S., Ohnishi, O., Yamazaki, T., Wang, Z., & Tan, Z. (2012). The effects of strong oxidizing slurry and processing atmosphere on double-sided CMP of SiC wafer. In Manufacturing Engineering and Automation II (pp. 1131-1134). (Advanced Materials Research; Vol. 591-593). https://doi.org/10.4028/www.scientific.net/AMR.591-593.1131

The effects of strong oxidizing slurry and processing atmosphere on double-sided CMP of SiC wafer. / Yin, Tao; Doi, Toshiro; Kurokawa, Syuhei; Ohnishi, Osamu; Yamazaki, Tsutomu; Wang, Zhida; Tan, Zhe.

Manufacturing Engineering and Automation II. 2012. p. 1131-1134 (Advanced Materials Research; Vol. 591-593).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yin, T, Doi, T, Kurokawa, S, Ohnishi, O, Yamazaki, T, Wang, Z & Tan, Z 2012, The effects of strong oxidizing slurry and processing atmosphere on double-sided CMP of SiC wafer. in Manufacturing Engineering and Automation II. Advanced Materials Research, vol. 591-593, pp. 1131-1134, 2012 International Conference on Manufacturing Engineering and Automation, ICMEA 2012, Guangzhou, China, 11/16/12. https://doi.org/10.4028/www.scientific.net/AMR.591-593.1131
Yin T, Doi T, Kurokawa S, Ohnishi O, Yamazaki T, Wang Z et al. The effects of strong oxidizing slurry and processing atmosphere on double-sided CMP of SiC wafer. In Manufacturing Engineering and Automation II. 2012. p. 1131-1134. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.591-593.1131
Yin, Tao ; Doi, Toshiro ; Kurokawa, Syuhei ; Ohnishi, Osamu ; Yamazaki, Tsutomu ; Wang, Zhida ; Tan, Zhe. / The effects of strong oxidizing slurry and processing atmosphere on double-sided CMP of SiC wafer. Manufacturing Engineering and Automation II. 2012. pp. 1131-1134 (Advanced Materials Research).
@inproceedings{6aec8e1599f045ba8a7f4b438251c030,
title = "The effects of strong oxidizing slurry and processing atmosphere on double-sided CMP of SiC wafer",
abstract = "In order to achieve high removal rate and high-quality processing on SiC wafer, we carried out the CMP processing experiment with the new type CMP machine (Bell-jar) by using the slurry with the addition of strong oxidant (KMnO4). It was found that the high speed CMP processing was achieved by controlling the concentration of KMnO4 in the slurry, the pH of slurry and the processing atmosphere. By using the slurry with the addition of KMnO4 of 0.1mol/L, the removal rate was the fastest up to 1019nm/h in the fixed pH of 6. By use of the slurry of pH 3, the removal rate of C-face of SiC wafer was 1695nm/h On the other hand, the fastest removal rate of Si-face of SiC wafer was only 51nm/h by using the slurry whose pH is 7. In the open air atmosphere, the removal rate was 915nm/h, which was higher than that at the higher and lower atmospheric pressure.",
author = "Tao Yin and Toshiro Doi and Syuhei Kurokawa and Osamu Ohnishi and Tsutomu Yamazaki and Zhida Wang and Zhe Tan",
year = "2012",
month = "12",
day = "19",
doi = "10.4028/www.scientific.net/AMR.591-593.1131",
language = "English",
isbn = "9783037855362",
series = "Advanced Materials Research",
pages = "1131--1134",
booktitle = "Manufacturing Engineering and Automation II",

}

TY - GEN

T1 - The effects of strong oxidizing slurry and processing atmosphere on double-sided CMP of SiC wafer

AU - Yin, Tao

AU - Doi, Toshiro

AU - Kurokawa, Syuhei

AU - Ohnishi, Osamu

AU - Yamazaki, Tsutomu

AU - Wang, Zhida

AU - Tan, Zhe

PY - 2012/12/19

Y1 - 2012/12/19

N2 - In order to achieve high removal rate and high-quality processing on SiC wafer, we carried out the CMP processing experiment with the new type CMP machine (Bell-jar) by using the slurry with the addition of strong oxidant (KMnO4). It was found that the high speed CMP processing was achieved by controlling the concentration of KMnO4 in the slurry, the pH of slurry and the processing atmosphere. By using the slurry with the addition of KMnO4 of 0.1mol/L, the removal rate was the fastest up to 1019nm/h in the fixed pH of 6. By use of the slurry of pH 3, the removal rate of C-face of SiC wafer was 1695nm/h On the other hand, the fastest removal rate of Si-face of SiC wafer was only 51nm/h by using the slurry whose pH is 7. In the open air atmosphere, the removal rate was 915nm/h, which was higher than that at the higher and lower atmospheric pressure.

AB - In order to achieve high removal rate and high-quality processing on SiC wafer, we carried out the CMP processing experiment with the new type CMP machine (Bell-jar) by using the slurry with the addition of strong oxidant (KMnO4). It was found that the high speed CMP processing was achieved by controlling the concentration of KMnO4 in the slurry, the pH of slurry and the processing atmosphere. By using the slurry with the addition of KMnO4 of 0.1mol/L, the removal rate was the fastest up to 1019nm/h in the fixed pH of 6. By use of the slurry of pH 3, the removal rate of C-face of SiC wafer was 1695nm/h On the other hand, the fastest removal rate of Si-face of SiC wafer was only 51nm/h by using the slurry whose pH is 7. In the open air atmosphere, the removal rate was 915nm/h, which was higher than that at the higher and lower atmospheric pressure.

UR - http://www.scopus.com/inward/record.url?scp=84871081802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871081802&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.591-593.1131

DO - 10.4028/www.scientific.net/AMR.591-593.1131

M3 - Conference contribution

SN - 9783037855362

T3 - Advanced Materials Research

SP - 1131

EP - 1134

BT - Manufacturing Engineering and Automation II

ER -