The evaluation of temporary degradation in quarter micron MOSFET by hydrogen passivation of Boron

Keiichi Tsukamoto, Taizoh Sadoh, Akihiro Ikeda, Yukinori Kuroki

Research output: Contribution to journalArticle

Abstract

This paper evaluates the outermost case of temporary MOSFET's characteristics degradation by hydrogen passivation of B (Boron) in low temperature process. A 1 μm p-MOSFET showed slight increase of drain resistance and about 40 % reduction of sheet resistance, experimentally. The simulation of 0.25 μm MOSFET's shows the channel length increase of more than 20 %, drain resistance increase about 40 %, as the results of 90 % passivation of dopant in lightly doped source and drain (LDD). To reduce the hydrogen passivation effects, the shortest LDD structure or heavily doped drain are required, and lower substrate impurity concentration must be chosen as far as possible to suppress the variation of threshold voltage. For the deep-submicron channel devices, however, it's difficult to make the sufficiently low resistive contact resistance.

Original languageEnglish
Pages (from-to)39-44
Number of pages6
JournalResearch Reports on Information Science and Electrical Engineering of Kyushu University
Volume1
Issue number1
Publication statusPublished - Sep 1 1996

Fingerprint

Passivation
Boron
Degradation
Hydrogen
Sheet resistance
Contact resistance
Threshold voltage
Doping (additives)
Impurities
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering

Cite this

The evaluation of temporary degradation in quarter micron MOSFET by hydrogen passivation of Boron. / Tsukamoto, Keiichi; Sadoh, Taizoh; Ikeda, Akihiro; Kuroki, Yukinori.

In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 1, No. 1, 01.09.1996, p. 39-44.

Research output: Contribution to journalArticle

@article{f43697897bf14cfe952c57f0114aa445,
title = "The evaluation of temporary degradation in quarter micron MOSFET by hydrogen passivation of Boron",
abstract = "This paper evaluates the outermost case of temporary MOSFET's characteristics degradation by hydrogen passivation of B (Boron) in low temperature process. A 1 μm p-MOSFET showed slight increase of drain resistance and about 40 {\%} reduction of sheet resistance, experimentally. The simulation of 0.25 μm MOSFET's shows the channel length increase of more than 20 {\%}, drain resistance increase about 40 {\%}, as the results of 90 {\%} passivation of dopant in lightly doped source and drain (LDD). To reduce the hydrogen passivation effects, the shortest LDD structure or heavily doped drain are required, and lower substrate impurity concentration must be chosen as far as possible to suppress the variation of threshold voltage. For the deep-submicron channel devices, however, it's difficult to make the sufficiently low resistive contact resistance.",
author = "Keiichi Tsukamoto and Taizoh Sadoh and Akihiro Ikeda and Yukinori Kuroki",
year = "1996",
month = "9",
day = "1",
language = "English",
volume = "1",
pages = "39--44",
journal = "Research Reports on Information Science and Electrical Engineering of Kyushu University",
issn = "1342-3819",
publisher = "Kyushu University, Faculty of Science",
number = "1",

}

TY - JOUR

T1 - The evaluation of temporary degradation in quarter micron MOSFET by hydrogen passivation of Boron

AU - Tsukamoto, Keiichi

AU - Sadoh, Taizoh

AU - Ikeda, Akihiro

AU - Kuroki, Yukinori

PY - 1996/9/1

Y1 - 1996/9/1

N2 - This paper evaluates the outermost case of temporary MOSFET's characteristics degradation by hydrogen passivation of B (Boron) in low temperature process. A 1 μm p-MOSFET showed slight increase of drain resistance and about 40 % reduction of sheet resistance, experimentally. The simulation of 0.25 μm MOSFET's shows the channel length increase of more than 20 %, drain resistance increase about 40 %, as the results of 90 % passivation of dopant in lightly doped source and drain (LDD). To reduce the hydrogen passivation effects, the shortest LDD structure or heavily doped drain are required, and lower substrate impurity concentration must be chosen as far as possible to suppress the variation of threshold voltage. For the deep-submicron channel devices, however, it's difficult to make the sufficiently low resistive contact resistance.

AB - This paper evaluates the outermost case of temporary MOSFET's characteristics degradation by hydrogen passivation of B (Boron) in low temperature process. A 1 μm p-MOSFET showed slight increase of drain resistance and about 40 % reduction of sheet resistance, experimentally. The simulation of 0.25 μm MOSFET's shows the channel length increase of more than 20 %, drain resistance increase about 40 %, as the results of 90 % passivation of dopant in lightly doped source and drain (LDD). To reduce the hydrogen passivation effects, the shortest LDD structure or heavily doped drain are required, and lower substrate impurity concentration must be chosen as far as possible to suppress the variation of threshold voltage. For the deep-submicron channel devices, however, it's difficult to make the sufficiently low resistive contact resistance.

UR - http://www.scopus.com/inward/record.url?scp=0030233608&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030233608&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030233608

VL - 1

SP - 39

EP - 44

JO - Research Reports on Information Science and Electrical Engineering of Kyushu University

JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

SN - 1342-3819

IS - 1

ER -