The formation of GaN dots on AlxGa1-xN surfaces using Si in gas-source molecular beam epitaxy

Xu Qiang Shen, Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi

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65 Citations (Scopus)


Nanoscale GaN dots were successfully formed on AlxGa1-xN/6H-SiC(0001) surfaces by gas-source molecular beam epitaxy. It was found that the growth mode can be changed by introducing Si before GaN growth, where the Si is believed to play an important role in the change of the AlxGa1-xN surface free energy. Without introducing Si, the GaN growth mode was two dimensional and (1×3) reconstruction was observed. The growth mode of GaN was changed from two-dimensional to three-dimensional by introducing Si on the AlxGa1-xN surface. In situ reflection high-energy electron diffraction and atomic force microscopy observations were used to monitor and characterize the growth processes and surface morphology.

Original languageEnglish
Pages (from-to)344-346
Number of pages3
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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