The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate

Zhengwei Chen, Kazuo Nishihagi, Xu Wang, Congyu Hu, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have fabricated the europium (Eu) doped Ga2O3 thin films on GaAs substrate by using pulsed laser deposition. The impact of Eu contents on structure, surface morphology, and optical properties are systematically investigated. We demonstrate that the Eu contents in Ga2O3 films can be controlled by adjusting the Eu contents in the targets. Moreover, all the films exhibited monoclinic Ga2O3 structure and smooth surface. We also clearly observe intense red emissions at 611 nm for the Eu doped Ga2O3 films. It is believed that this work paves the way for the development of GaAs-based red electroluminescence devices by using wide bandgap Ga2O3 as the host materials for Eu3+ ions.

Original languageEnglish
Pages (from-to)374-378
Number of pages5
JournalJournal of Luminescence
Volume194
DOIs
Publication statusPublished - Feb 2018

Fingerprint

Europium
europium
Optical properties
Doping (additives)
optical properties
Substrates
Electroluminescence
Pulsed laser deposition
electroluminescence
pulsed laser deposition
Surface morphology
Energy gap
Lasers
adjusting
gallium arsenide
Ions
Thin films
Equipment and Supplies
thin films
ions

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate. / Chen, Zhengwei; Nishihagi, Kazuo; Wang, Xu; Hu, Congyu; Arita, Makoto; Saito, Katsuhiko; Tanaka, Tooru; Guo, Qixin.

In: Journal of Luminescence, Vol. 194, 02.2018, p. 374-378.

Research output: Contribution to journalArticle

Chen, Zhengwei ; Nishihagi, Kazuo ; Wang, Xu ; Hu, Congyu ; Arita, Makoto ; Saito, Katsuhiko ; Tanaka, Tooru ; Guo, Qixin. / The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate. In: Journal of Luminescence. 2018 ; Vol. 194. pp. 374-378.
@article{ae979c3c4ab441f68a2515ab0f600829,
title = "The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate",
abstract = "We have fabricated the europium (Eu) doped Ga2O3 thin films on GaAs substrate by using pulsed laser deposition. The impact of Eu contents on structure, surface morphology, and optical properties are systematically investigated. We demonstrate that the Eu contents in Ga2O3 films can be controlled by adjusting the Eu contents in the targets. Moreover, all the films exhibited monoclinic Ga2O3 structure and smooth surface. We also clearly observe intense red emissions at 611 nm for the Eu doped Ga2O3 films. It is believed that this work paves the way for the development of GaAs-based red electroluminescence devices by using wide bandgap Ga2O3 as the host materials for Eu3+ ions.",
author = "Zhengwei Chen and Kazuo Nishihagi and Xu Wang and Congyu Hu and Makoto Arita and Katsuhiko Saito and Tooru Tanaka and Qixin Guo",
year = "2018",
month = "2",
doi = "10.1016/j.jlumin.2017.10.054",
language = "English",
volume = "194",
pages = "374--378",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier",

}

TY - JOUR

T1 - The impact of dopant contents on structures, morphologies and optical properties of Eu doped Ga2O3 films on GaAs substrate

AU - Chen, Zhengwei

AU - Nishihagi, Kazuo

AU - Wang, Xu

AU - Hu, Congyu

AU - Arita, Makoto

AU - Saito, Katsuhiko

AU - Tanaka, Tooru

AU - Guo, Qixin

PY - 2018/2

Y1 - 2018/2

N2 - We have fabricated the europium (Eu) doped Ga2O3 thin films on GaAs substrate by using pulsed laser deposition. The impact of Eu contents on structure, surface morphology, and optical properties are systematically investigated. We demonstrate that the Eu contents in Ga2O3 films can be controlled by adjusting the Eu contents in the targets. Moreover, all the films exhibited monoclinic Ga2O3 structure and smooth surface. We also clearly observe intense red emissions at 611 nm for the Eu doped Ga2O3 films. It is believed that this work paves the way for the development of GaAs-based red electroluminescence devices by using wide bandgap Ga2O3 as the host materials for Eu3+ ions.

AB - We have fabricated the europium (Eu) doped Ga2O3 thin films on GaAs substrate by using pulsed laser deposition. The impact of Eu contents on structure, surface morphology, and optical properties are systematically investigated. We demonstrate that the Eu contents in Ga2O3 films can be controlled by adjusting the Eu contents in the targets. Moreover, all the films exhibited monoclinic Ga2O3 structure and smooth surface. We also clearly observe intense red emissions at 611 nm for the Eu doped Ga2O3 films. It is believed that this work paves the way for the development of GaAs-based red electroluminescence devices by using wide bandgap Ga2O3 as the host materials for Eu3+ ions.

UR - http://www.scopus.com/inward/record.url?scp=85032381704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85032381704&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2017.10.054

DO - 10.1016/j.jlumin.2017.10.054

M3 - Article

AN - SCOPUS:85032381704

VL - 194

SP - 374

EP - 378

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

ER -