The influence of structural properties on conductivity and luminescence of MBE grown InN

P. Specht, R. Armitage, J. Ho, E. Gunawan, Q. Yang, X. Xu, C. Kisielowski, E. R. Weber

Research output: Contribution to journalConference articlepeer-review

37 Citations (Scopus)

Abstract

Within the last few years indium nitride (InN) gained substantial interest due to its controversially discussed apparent band gap and its predicted highest maximum electron mobility among several III-V compounds, including Al(Ga)N and GaAs. The band gap of epitaxial InN has been recently reported to be around 0.7eV rather than the previously accepted value of 1.9eV obtained from polycrystalline films. Thus, InN could be a promising material for applications in infrared opto-electronics or high-speed electronics. However, the structural quality of the InN epilayers is still inferior to GaN and needs to be improved. Also, the role of many contaminants in InN and their effect on the epilayer's conductivity and/or luminescence properties is still under investigation. This work describes recent studies of InN growth by molecular beam epitaxy on sapphire (0001) substrates. The effect of buffer layer variations including a prior substrate nitridation step is discussed. Structural properties (X-ray diffraction, AFM and TEM images) and chemical profiles (SIMS) will be correlated to Hall data and Photo-luminescence spectra. The role of oxygen and hydrogen as possible donors in InN will be discussed.

Original languageEnglish
Pages (from-to)111-118
Number of pages8
JournalJournal of Crystal Growth
Volume269
Issue number1
DOIs
Publication statusPublished - Aug 15 2004
Externally publishedYes
EventProceedings of the First ONR International Indium Nitride Work - Fremantle, Australia
Duration: Nov 16 2003Nov 20 2003

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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