The influence of unsteady state plasma on the properties of a-Si:H films formed by glow discharge-chemical vapour deposition

K. Hamamoto, H. Ozaki, K. Nakatani, M. Yano, K. Suzuki, H. Okaniwa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

An unsteady state plasma is known to exist during the initial stage of the glow discharge decomposition of silane (SiH4) gas. The properties of the i layer deposited in this unsteady state plasma and p-i-n stacked hydrogenated amorphous silicon solar cells having such an i layer were investigated. It was found that this layer had an undesirably wide optical band gap and low conductivity because of the large number of SiH2 sites.

Original languageEnglish
Pages (from-to)161-170
Number of pages10
JournalThin Solid Films
Volume177
Issue number1-2
DOIs
Publication statusPublished - Oct 1989
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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