The mixed oxide A12O3V2O5 as a semiconductor gas sensor for NO and NO2

Tatsumi Ishihara, Kazuhiko Shiokawa, Koichi Eguchi, Hiromichi Arai

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    60 Citations (Scopus)

    Abstract

    Several semiconductive oxides are tested as sensors for the detection of NO, NO2, CO and CO2. The conductivity of Al2O3V2O5 is sensitive to 1-1000 ppm of NO and NO2, but is insensitive to CO or CO2. The mixed oxide (Al2O3)0.5(V2O5)0.5 is excellent not only in its selectivity for detection of NO and NO2 but also in its sensitivity. The amount of NO adsorbed is greatly enhanced, but that of CO is unaffected by mixing V2O5 with Al2O3. The high sensitivity of Al2O3V2O5 to NO and NO2 appears to result from the increased amount of adsorbed nitrogen oxide.

    Original languageEnglish
    Pages (from-to)259-265
    Number of pages7
    JournalSensors and Actuators
    Volume19
    Issue number3
    DOIs
    Publication statusPublished - Sep 1 1989

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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