The optimal profile design for SJ-MOSFET fabricated by double-ion- implantation and multi-epitaxial method

Syotaro Ono; Wataru Saito; Masaru Izumisawa; Yasuto Sumi; Shoichiro Kurushima; Masataka Tsuji; Ken'ichi Tokano; Masakazu Yamaguchi

doi:10.1109/ISPSD.2008.4538923

The optimal profile design for SJ-MOSFET fabricated by double-ion- implantation and multi-epitaxial method

Syotaro Ono, Wataru Saito, Masaru Izumisawa, Yasuto Sumi, Shoichiro Kurushima, Masataka Tsuji, Ken'ichi Tokano, Masakazu Yamaguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We investigated the profile dependency of specific on-resistance (R _onA) under high-temperature and high-current-density conditions for 600V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for the first time. The column doping profile is an important design parameter for the R_onA characteristics because the profile affects the electron mobility (μ_e) in the drift region. The n-column profile was modulated by the column diffusion time (t _diff) in this experiment. The optimal t_diff achieved minimal R_onA under the high-temperature and high-current-density conditions.

Original language	English
Title of host publication	ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's
Pages	161-164
Number of pages	4
DOIs	https://doi.org/10.1109/ISPSD.2008.4538923
Publication status	Published - Sept 17 2008
Externally published	Yes
Event	ISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's - Orlando, FL, United States Duration: May 18 2008 → May 22 2008

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Conference

Conference	ISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's
Country/Territory	United States
City	Orlando, FL
Period	5/18/08 → 5/22/08

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1109/ISPSD.2008.4538923

Cite this

Ono, S., Saito, W., Izumisawa, M., Sumi, Y., Kurushima, S., Tsuji, M., Tokano, K., & Yamaguchi, M. (2008). The optimal profile design for SJ-MOSFET fabricated by double-ion- implantation and multi-epitaxial method. In ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's (pp. 161-164). [4538923] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2008.4538923

The optimal profile design for SJ-MOSFET fabricated by double-ion- implantation and multi-epitaxial method. / Ono, Syotaro; Saito, Wataru; Izumisawa, Masaru et al.

ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's. 2008. p. 161-164 4538923 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ono, S, Saito, W, Izumisawa, M, Sumi, Y, Kurushima, S, Tsuji, M, Tokano, K & Yamaguchi, M 2008, The optimal profile design for SJ-MOSFET fabricated by double-ion- implantation and multi-epitaxial method. in ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's., 4538923, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp. 161-164, ISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's, Orlando, FL, United States, 5/18/08. https://doi.org/10.1109/ISPSD.2008.4538923

Ono S, Saito W, Izumisawa M, Sumi Y, Kurushima S, Tsuji M et al. The optimal profile design for SJ-MOSFET fabricated by double-ion- implantation and multi-epitaxial method. In ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's. 2008. p. 161-164. 4538923. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2008.4538923

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title = "The optimal profile design for SJ-MOSFET fabricated by double-ion- implantation and multi-epitaxial method",

abstract = "We investigated the profile dependency of specific on-resistance (R onA) under high-temperature and high-current-density conditions for 600V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for the first time. The column doping profile is an important design parameter for the RonA characteristics because the profile affects the electron mobility (μe) in the drift region. The n-column profile was modulated by the column diffusion time (t diff) in this experiment. The optimal tdiff achieved minimal RonA under the high-temperature and high-current-density conditions.",

author = "Syotaro Ono and Wataru Saito and Masaru Izumisawa and Yasuto Sumi and Shoichiro Kurushima and Masataka Tsuji and Ken'ichi Tokano and Masakazu Yamaguchi",

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AU - Ono, Syotaro

AU - Saito, Wataru

AU - Izumisawa, Masaru

AU - Sumi, Yasuto

AU - Kurushima, Shoichiro

AU - Tsuji, Masataka

AU - Tokano, Ken'ichi

AU - Yamaguchi, Masakazu

PY - 2008/9/17

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N2 - We investigated the profile dependency of specific on-resistance (R onA) under high-temperature and high-current-density conditions for 600V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for the first time. The column doping profile is an important design parameter for the RonA characteristics because the profile affects the electron mobility (μe) in the drift region. The n-column profile was modulated by the column diffusion time (t diff) in this experiment. The optimal tdiff achieved minimal RonA under the high-temperature and high-current-density conditions.

AB - We investigated the profile dependency of specific on-resistance (R onA) under high-temperature and high-current-density conditions for 600V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for the first time. The column doping profile is an important design parameter for the RonA characteristics because the profile affects the electron mobility (μe) in the drift region. The n-column profile was modulated by the column diffusion time (t diff) in this experiment. The optimal tdiff achieved minimal RonA under the high-temperature and high-current-density conditions.

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T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

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The optimal profile design for SJ-MOSFET fabricated by double-ion- implantation and multi-epitaxial method

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