The optimal profile design for SJ-MOSFET fabricated by double-ion- implantation and multi-epitaxial method

Syotaro Ono, Wataru Saito, Masaru Izumisawa, Yasuto Sumi, Shoichiro Kurushima, Masataka Tsuji, Ken'ichi Tokano, Masakazu Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated the profile dependency of specific on-resistance (R onA) under high-temperature and high-current-density conditions for 600V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for the first time. The column doping profile is an important design parameter for the RonA characteristics because the profile affects the electron mobility (μe) in the drift region. The n-column profile was modulated by the column diffusion time (t diff) in this experiment. The optimal tdiff achieved minimal RonA under the high-temperature and high-current-density conditions.

Original languageEnglish
Title of host publicationISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's
Pages161-164
Number of pages4
DOIs
Publication statusPublished - Sep 17 2008
Externally publishedYes
EventISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's - Orlando, FL, United States
Duration: May 18 2008May 22 2008

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

ConferenceISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's
CountryUnited States
CityOrlando, FL
Period5/18/085/22/08

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Ono, S., Saito, W., Izumisawa, M., Sumi, Y., Kurushima, S., Tsuji, M., ... Yamaguchi, M. (2008). The optimal profile design for SJ-MOSFET fabricated by double-ion- implantation and multi-epitaxial method. In ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's (pp. 161-164). [4538923] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2008.4538923