The relaxation of reproducible resistance modulations in a Au/(Pb,La)(Zr, Ti)O3/(La,Sr)2CuO4 thin film in high temperatures

Kazumasa Yamada, Shigeru Kaku, Mizuki Yamamoto, Daisuke Matsumoto, Yukio Watanabe

Research output: Contribution to journalConference article

Abstract

We measured the transport through Au/(Pb,La)(Zr, Ti)O3/(La,Sr) 2CuO4. Applying the +10 V pulses and -10 V pulses, the resistance decreases and increases, respectively. The reproducible resistance modulation is hold beyond 10 hours. After annealing at 150°C, the conductance decreases. It is considered that the band bending due to trapped electrons, returns and the effective barrier height of metal/ferroelectrics surface increases.

Original languageEnglish
Pages (from-to)70-73
Number of pages4
JournalFerroelectrics
Volume357
Issue number1 PART 3
DOIs
Publication statusPublished - Dec 1 2007
Event5th Asian Meeting on Ferroelectricity, AMF-5 - Noda, Japan
Duration: Sep 3 2006Sep 7 2006

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Ferroelectric materials
Metals
Modulation
Annealing
modulation
Thin films
Electrons
thin films
pulses
Temperature
annealing
metals
electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

The relaxation of reproducible resistance modulations in a Au/(Pb,La)(Zr, Ti)O3/(La,Sr)2CuO4 thin film in high temperatures. / Yamada, Kazumasa; Kaku, Shigeru; Yamamoto, Mizuki; Matsumoto, Daisuke; Watanabe, Yukio.

In: Ferroelectrics, Vol. 357, No. 1 PART 3, 01.12.2007, p. 70-73.

Research output: Contribution to journalConference article

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