The roles of ambient oxygen and substrate temperature on growth of diamond thin films by pulsed laser deposition

Tsuyoshi Yoshitake, Takashi Nishiyama, Takeshi Hara, Kunihito Nagayama

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The suitable oxygen atmosphere of 5×10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 650°C, single-phase diamond films consisting of diamond crystal with diameters of 1 - 5 μm could be grown. The results demonstrated that the diamond thin films can be grown homoepitaxially using PLD by controlling the deposition parameters, such as the oxygen pressure and the substrate temperature.

Original languageEnglish
Pages (from-to)825-829
Number of pages5
JournalInternational Journal of Modern Physics B
Volume16
Issue number6-7
DOIs
Publication statusPublished - Mar 20 2002

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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