The silicon on diamond structure by low-temperature bonding technique

Sethavut Duangchan, Yusuke Uchikawa, Yusuke Koishikawa, Baba Akiyoshi, Kentaro Nakagawa, Satoshi Matsumoto, Masataka Hasegawa, Shinichi Nishizawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

We demonstrate fabrication a silicon on diamond structure at around room temperature using a plasma-activated bonding (PAB) method. Thin and flat silicon-dioxide (SiO2) film was used as an activation layer for PAB. The SiO2 film was prepared by a chemical vapor deposition and then a chemical mechanical polishing (CMP). The surface roughness after the CMP were average ∼1 nm rms at 300 nm thick. Thinning of the SiO2 film was carried out using 2.5%HF solution. We found that there are no significant change in the surface roughness after the thinning process. The roughness of SiO2 less than or equal to 1 nm is required for success bonding at low-temperature with vacuum environment. The scanning electron microscope has shown seamless at the bonding interface that proves to good bonding result.

Original languageEnglish
Title of host publication2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages187-192
Number of pages6
ISBN (Electronic)9781479986095
DOIs
Publication statusPublished - Jul 15 2015
Externally publishedYes
Event2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States
Duration: May 26 2015May 29 2015

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2015-July
ISSN (Print)0569-5503

Other

Other2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
CountryUnited States
CitySan Diego
Period5/26/155/29/15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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