@inproceedings{09abe58af36b4798ac2e1558a16de096,
title = "The silicon on diamond structure by low-temperature bonding technique",
abstract = "We demonstrate fabrication a silicon on diamond structure at around room temperature using a plasma-activated bonding (PAB) method. Thin and flat silicon-dioxide (SiO2) film was used as an activation layer for PAB. The SiO2 film was prepared by a chemical vapor deposition and then a chemical mechanical polishing (CMP). The surface roughness after the CMP were average ∼1 nm rms at 300 nm thick. Thinning of the SiO2 film was carried out using 2.5%HF solution. We found that there are no significant change in the surface roughness after the thinning process. The roughness of SiO2 less than or equal to 1 nm is required for success bonding at low-temperature with vacuum environment. The scanning electron microscope has shown seamless at the bonding interface that proves to good bonding result.",
author = "Sethavut Duangchan and Yusuke Uchikawa and Yusuke Koishikawa and Baba Akiyoshi and Kentaro Nakagawa and Satoshi Matsumoto and Masataka Hasegawa and Shinichi Nishizawa",
year = "2015",
month = jul,
day = "15",
doi = "10.1109/ECTC.2015.7159590",
language = "English",
series = "Proceedings - Electronic Components and Technology Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "187--192",
booktitle = "2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015",
address = "United States",
note = "2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 ; Conference date: 26-05-2015 Through 29-05-2015",
}