We report that temperature dependence of Hall mobility of the strongly disordered films In2O3-ZnO. We made targets by mixing ZnO into In2O3 at the ratio 0.5 ∼ 2 wt%. Sputtering those targets on glass substrate by DC magnetron method, amorphous films with 25 nm thickness were obtained. By annealing at T = 150 ∼ 350 OC in the air, oxygen defect decreased and the conductance decreased. We obtained films with conductivity 0.2mS/m ∼ 300S/m. In the temperature range T = 90∼300K, we measured the Hall effect of these films. The density of electron was 4 × 1018 ∼ 1.2 × 1022 m-3 at the room temperature. The Hall mobility μH shows the thermal-activation-like temperature dependence μH = AT -1/2 exp(EB/kBT), where EB is activation energy. By fitting, we obtained EB = 60 ∼ 86 meV.
|Journal||Journal of Physics: Conference Series|
|Issue number||PART 4|
|Publication status||Published - Jan 1 2012|
|Event||26th International Conference on Low Temperature Physics, LT 2011 - Beijing, China|
Duration: Aug 10 2011 → Aug 17 2011
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)