The temperature dependence of relaxation of resistive memory effect in a metal/PLZT thin film

Kazumasa Yamada, Shigeru Kaku, Mizuki Yamato, Daisuke Matsumoto, Yukio Watanabe

Research output: Contribution to journalConference article

Abstract

The long pulses were appllied to metal/(Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 film and observed the resistive memory effect. The temperature dependence of relaxation of the resistive memory effect was investigated. At the room temperature, the resistance modulation continues beyond 2 hours. At the high temperature 130C, the current returns to the former value at a few minutes after applying the pulse. It is considered that trapped charge relaxes rapidly due to the high temperature and the band bending returns.

Original languageEnglish
Pages (from-to)137-139
Number of pages3
JournalFerroelectrics
Volume347
DOIs
Publication statusPublished - Aug 3 2007
Event8th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity, RCBJSF-8 - Tsukuba, Japan
Duration: May 15 2006May 19 2006

Fingerprint

Metals
Data storage equipment
Thin films
temperature dependence
thin films
pulses
metals
modulation
Temperature
room temperature
Modulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

The temperature dependence of relaxation of resistive memory effect in a metal/PLZT thin film. / Yamada, Kazumasa; Kaku, Shigeru; Yamato, Mizuki; Matsumoto, Daisuke; Watanabe, Yukio.

In: Ferroelectrics, Vol. 347, 03.08.2007, p. 137-139.

Research output: Contribution to journalConference article

Yamada, Kazumasa ; Kaku, Shigeru ; Yamato, Mizuki ; Matsumoto, Daisuke ; Watanabe, Yukio. / The temperature dependence of relaxation of resistive memory effect in a metal/PLZT thin film. In: Ferroelectrics. 2007 ; Vol. 347. pp. 137-139.
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