TY - JOUR
T1 - The temperature dependence of relaxation of resistive memory effect in a metal/PLZT thin film
AU - Yamada, Kazumasa
AU - Kaku, Shigeru
AU - Yamato, Mizuki
AU - Matsumoto, Daisuke
AU - Watanabe, Yukio
N1 - Funding Information:
This work is supported by Grants-in-aid for Scientific Research from JSPS No. 16340093 and No. 17651063.
PY - 2007
Y1 - 2007
N2 - The long pulses were appllied to metal/(Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 film and observed the resistive memory effect. The temperature dependence of relaxation of the resistive memory effect was investigated. At the room temperature, the resistance modulation continues beyond 2 hours. At the high temperature 130C, the current returns to the former value at a few minutes after applying the pulse. It is considered that trapped charge relaxes rapidly due to the high temperature and the band bending returns.
AB - The long pulses were appllied to metal/(Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 film and observed the resistive memory effect. The temperature dependence of relaxation of the resistive memory effect was investigated. At the room temperature, the resistance modulation continues beyond 2 hours. At the high temperature 130C, the current returns to the former value at a few minutes after applying the pulse. It is considered that trapped charge relaxes rapidly due to the high temperature and the band bending returns.
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U2 - 10.1080/00150190601187492
DO - 10.1080/00150190601187492
M3 - Conference article
AN - SCOPUS:34547421891
SN - 0015-0193
VL - 347
SP - 137
EP - 139
JO - Ferroelectrics
JF - Ferroelectrics
T2 - 8th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity, RCBJSF-8
Y2 - 15 May 2006 through 19 May 2006
ER -