The long pulses were appllied to metal/(Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 film and observed the resistive memory effect. The temperature dependence of relaxation of the resistive memory effect was investigated. At the room temperature, the resistance modulation continues beyond 2 hours. At the high temperature 130C, the current returns to the former value at a few minutes after applying the pulse. It is considered that trapped charge relaxes rapidly due to the high temperature and the band bending returns.
|Number of pages||3|
|Publication status||Published - Aug 3 2007|
|Event||8th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity, RCBJSF-8 - Tsukuba, Japan|
Duration: May 15 2006 → May 19 2006
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics