Theoretical analyses of in incorporation and compositional instability in coherently grown InGaN thin films

Tomoe Yayama; Yoshihiro Kangawa; Koichi Kakimoto; Akinori Koukitu

doi:10.1002/pssc.200983475

Theoretical analyses of in incorporation and compositional instability in coherently grown InGaN thin films

Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Conference article › peer-review

19 Citations (Scopus)

Abstract

We performed thermodynamic analyses to calculate the relationship between the input indium molar ratio and solid composition of a coherently grown InGaN thin film that is subjected compressive or tensile stress. The theoretical approach incorporates energy loss of a thin film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InGaN is lower than that of stress-free InGaN. This represents the composition pulling effect. We also studied stable growth modes under various growth conditions. The results suggest the importance of control of partial pressure of NH₃ to optimize growth conditions of InGaN with a unique composition.

Original language	English
Pages (from-to)	2249-2251
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.200983475
Publication status	Published - 2010
Event	8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of Duration: Oct 18 2009 → Oct 23 2009

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200983475

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title = "Theoretical analyses of in incorporation and compositional instability in coherently grown InGaN thin films",

abstract = "We performed thermodynamic analyses to calculate the relationship between the input indium molar ratio and solid composition of a coherently grown InGaN thin film that is subjected compressive or tensile stress. The theoretical approach incorporates energy loss of a thin film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InGaN is lower than that of stress-free InGaN. This represents the composition pulling effect. We also studied stable growth modes under various growth conditions. The results suggest the importance of control of partial pressure of NH3 to optimize growth conditions of InGaN with a unique composition.",

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year = "2010",

doi = "10.1002/pssc.200983475",

language = "English",

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journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

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number = "7-8",

note = "8th International Conference on Nitride Semiconductors, ICNS-8 ; Conference date: 18-10-2009 Through 23-10-2009",

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TY - JOUR

T1 - Theoretical analyses of in incorporation and compositional instability in coherently grown InGaN thin films

AU - Yayama, Tomoe

AU - Kangawa, Yoshihiro

AU - Kakimoto, Koichi

AU - Koukitu, Akinori

PY - 2010

Y1 - 2010

N2 - We performed thermodynamic analyses to calculate the relationship between the input indium molar ratio and solid composition of a coherently grown InGaN thin film that is subjected compressive or tensile stress. The theoretical approach incorporates energy loss of a thin film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InGaN is lower than that of stress-free InGaN. This represents the composition pulling effect. We also studied stable growth modes under various growth conditions. The results suggest the importance of control of partial pressure of NH3 to optimize growth conditions of InGaN with a unique composition.

AB - We performed thermodynamic analyses to calculate the relationship between the input indium molar ratio and solid composition of a coherently grown InGaN thin film that is subjected compressive or tensile stress. The theoretical approach incorporates energy loss of a thin film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InGaN is lower than that of stress-free InGaN. This represents the composition pulling effect. We also studied stable growth modes under various growth conditions. The results suggest the importance of control of partial pressure of NH3 to optimize growth conditions of InGaN with a unique composition.

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VL - 7

SP - 2249

EP - 2251

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

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T2 - 8th International Conference on Nitride Semiconductors, ICNS-8

Y2 - 18 October 2009 through 23 October 2009

ER -

Theoretical analyses of in incorporation and compositional instability in coherently grown InGaN thin films

Abstract

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