We performed thermodynamic analyses to calculate the relationship between the input indium molar ratio and solid composition of a coherently grown InGaN thin film that is subjected compressive or tensile stress. The theoretical approach incorporates energy loss of a thin film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InGaN is lower than that of stress-free InGaN. This represents the composition pulling effect. We also studied stable growth modes under various growth conditions. The results suggest the importance of control of partial pressure of NH3 to optimize growth conditions of InGaN with a unique composition.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - Aug 26 2010|
|Event||8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of|
Duration: Oct 18 2009 → Oct 23 2009
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics