Theoretical analyses of in incorporation and compositional instability in coherently grown InGaN thin films

Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu

Research output: Contribution to journalConference article

18 Citations (Scopus)

Abstract

We performed thermodynamic analyses to calculate the relationship between the input indium molar ratio and solid composition of a coherently grown InGaN thin film that is subjected compressive or tensile stress. The theoretical approach incorporates energy loss of a thin film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InGaN is lower than that of stress-free InGaN. This represents the composition pulling effect. We also studied stable growth modes under various growth conditions. The results suggest the importance of control of partial pressure of NH3 to optimize growth conditions of InGaN with a unique composition.

Original languageEnglish
Pages (from-to)2249-2251
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume7
Issue number7-8
DOIs
Publication statusPublished - Aug 26 2010
Event8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of
Duration: Oct 18 2009Oct 23 2009

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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