Theoretical analysis of ARUPS of a Si(100) surface at room temperature

K. Inoue, M. Nakayama, H. Kawai

Research output: Contribution to journalArticle

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Abstract

ARUPS spectra of a Si(100) surface with disorder perpendicular to the dimer row are studied by the tight-binding method for the ensemble of surface buckled dimers. We assume order along the row. Results of ARUPS experiment on the surface at room temperature agree qualitatively with calculated results for disordered structure in which the distance to the next buckled dimer along the row and the height of the buckled dimer change alternately along the row. Peaks of two branches observed in a recent experiment at room temperature appear distinctly in calculated results as long as the short range order among the rows is not weak. The intensity of the two branches is very small compared to the other for conventional structure of the surface.

Original languageEnglish
Pages (from-to)251-259
Number of pages9
JournalSurface Science
Volume250
Issue number1-3
DOIs
Publication statusPublished - Jul 2 1991

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Dimers
dimers
room temperature
Temperature
Experiments
disorders

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Theoretical analysis of ARUPS of a Si(100) surface at room temperature. / Inoue, K.; Nakayama, M.; Kawai, H.

In: Surface Science, Vol. 250, No. 1-3, 02.07.1991, p. 251-259.

Research output: Contribution to journalArticle

Inoue, K. ; Nakayama, M. ; Kawai, H. / Theoretical analysis of ARUPS of a Si(100) surface at room temperature. In: Surface Science. 1991 ; Vol. 250, No. 1-3. pp. 251-259.
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