Theoretical approach to initial growth kinetics of GaN on GaN(0 0 1)

Yoshihiro Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi, Koichi Kakimoto

Research output: Contribution to journalArticle

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Abstract

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(0 0 1)-(4×1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(0 0 1)-(4×2)β2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(0 0 1)-(4×1). That is, in the initial growth stage of c-GaN on GaN(0 0 1)-(4×1), a N-adsorbed structure is formed and then Ga adsorbs on the N adatom.

Original languageEnglish
Pages (from-to)62-65
Number of pages4
JournalJournal of Crystal Growth
Volume300
Issue number1
DOIs
Publication statusPublished - Mar 1 2007

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Growth kinetics
Adsorption
adsorption
kinetics
Adatoms
adatoms
Free energy
Superconducting transition temperature
Desorption
desorption
transition temperature
free energy
Vapors
vapor phases

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Theoretical approach to initial growth kinetics of GaN on GaN(0 0 1). / Kangawa, Yoshihiro; Matsuo, Y.; Akiyama, T.; Ito, T.; Shiraishi, K.; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 300, No. 1, 01.03.2007, p. 62-65.

Research output: Contribution to journalArticle

Kangawa, Yoshihiro ; Matsuo, Y. ; Akiyama, T. ; Ito, T. ; Shiraishi, K. ; Kakimoto, Koichi. / Theoretical approach to initial growth kinetics of GaN on GaN(0 0 1). In: Journal of Crystal Growth. 2007 ; Vol. 300, No. 1. pp. 62-65.
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AU - Matsuo, Y.

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AU - Ito, T.

AU - Shiraishi, K.

AU - Kakimoto, Koichi

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N2 - We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(0 0 1)-(4×1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(0 0 1)-(4×2)β2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(0 0 1)-(4×1). That is, in the initial growth stage of c-GaN on GaN(0 0 1)-(4×1), a N-adsorbed structure is formed and then Ga adsorbs on the N adatom.

AB - We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(0 0 1)-(4×1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(0 0 1)-(4×2)β2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(0 0 1)-(4×1). That is, in the initial growth stage of c-GaN on GaN(0 0 1)-(4×1), a N-adsorbed structure is formed and then Ga adsorbs on the N adatom.

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