TY - JOUR
T1 - Theoretical approach to surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy
AU - Kusaba, Akira
AU - Kangawa, Yoshihiro
AU - Honda, Yoshio
AU - Amano, Hiroshi
AU - Kakimoto, Koichi
PY - 2016/5
Y1 - 2016/5
N2 - We investigated the surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy using an ab initio-based approach. We observed that the reconstructed structure changes from In-rich surfaces such as In bilayer and monolayer surfaces to an ideal surface with increasing growth temperature. In addition, we investigated the effects of surface reconstruction on the growth process using a newly improved thermodynamic analysis method. Although no barrier is present in the growth reaction when the In-rich surfaces appear, the results suggest that the surface phase acts as a barrier in the growth reaction when the ideal surface appears. Furthermore, we discuss the growth conditions that enable high-temperature growth with a smooth reaction path.
AB - We investigated the surface reconstruction of InN(0001) during raised-pressure metalorganic vapor-phase epitaxy using an ab initio-based approach. We observed that the reconstructed structure changes from In-rich surfaces such as In bilayer and monolayer surfaces to an ideal surface with increasing growth temperature. In addition, we investigated the effects of surface reconstruction on the growth process using a newly improved thermodynamic analysis method. Although no barrier is present in the growth reaction when the In-rich surfaces appear, the results suggest that the surface phase acts as a barrier in the growth reaction when the ideal surface appears. Furthermore, we discuss the growth conditions that enable high-temperature growth with a smooth reaction path.
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U2 - 10.7567/JJAP.55.05FM01
DO - 10.7567/JJAP.55.05FM01
M3 - Article
AN - SCOPUS:84965079410
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5
M1 - 05FM01
ER -