Theoretical approach to the gas response of oxide semiconductor film devices under control of gas diffusion and reaction effects

Noboru Yamazoe, Kengo Shimanoe

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Gas response of semiconductor film devices to reducing gas under control of gas diffusion and reaction effects was investigated in the light of recently developed theory of receptor function of small semiconductor crystals. The conventional gas diffusion and reaction equation is applicable consistently to the analysis of this issue provided that the size of the crystals and the partial pressure of reducing gas are small enough. Under this condition, gas response can be estimated as a function of film thickness and operating temperature. The bell-shaped correlations between response and temperature as well as depth dependence of the response are simulated and discussed.

Original languageEnglish
Pages (from-to)277-282
Number of pages6
JournalSensors and Actuators, B: Chemical
Volume154
Issue number2
DOIs
Publication statusPublished - Jun 20 2011

Fingerprint

gaseous diffusion
Diffusion in gases
Gases
oxides
gases
Semiconductor materials
Crystals
operating temperature
bells
Partial pressure
crystals
partial pressure
Film thickness
film thickness
Temperature
temperature
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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