Theoretical approach to the rate of response of semiconductor gas sensor

Noboru Yamazoe, Kengo Shimanoe

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The rate of response of a semiconductor gas sensor to a change in the partial pressure of O2, H2 or NO2 has been successfully formulated theoretically under the assumptions of volume depletion and a specific scheme of electron transfer (modified model). In each case, the rate is expressed as a logarithmic function of reduced resistance and its rate constant (reciprocal of time constant) is given by a combination of three terms, which reflect the rate of surface reactions, the donor density and the size of constituent crystals, respectively. Especially remarkable is the last term which leads to strong attenuations of the rate of response for the crystals with reduced size (n) exceeding 5 (spheres) or 3 (plates).

Original languageEnglish
Pages (from-to)132-140
Number of pages9
JournalSensors and Actuators, B: Chemical
Volume150
Issue number1
DOIs
Publication statusPublished - Oct 21 2010

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Chemical sensors
Semiconductor materials
Crystals
sensors
Surface reactions
gases
Partial pressure
Rate constants
Electrons
surface reactions
time constant
crystals
partial pressure
electron transfer
depletion
attenuation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Theoretical approach to the rate of response of semiconductor gas sensor. / Yamazoe, Noboru; Shimanoe, Kengo.

In: Sensors and Actuators, B: Chemical, Vol. 150, No. 1, 21.10.2010, p. 132-140.

Research output: Contribution to journalArticle

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