Theoretical investigation for the formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP alloy semiconductor using an empirical interatomic potential

Yoshihiro Kangawa, Noriyuki Kuwano, Kensuke Oki, Tomonori Ito

Research output: Contribution to journalArticlepeer-review

Abstract

It is known that a CuAu-I (L10) type ordered structure is formed in an (In, Ga) As alloy semiconductor grown on a slightly tilted (110)InP substrate. The energy gains due to the formation of L10 in a bulk alloy, in a thick epi-layer and in a single epi-layer on a two-monolayer step, were investigated using an empirical interatomic potential calculation. It is confirmed that an L10 ordered structure is not stable in a bulk alloy. The ordered structure can exist stably in a thick epi-layer, but the energy gain due to the ordering is too small to form the ordered structure at the growth temperature. The L10 ordered structure can actually form at a two-monolayer step on the growth-surface. This indicates that the atomic arrangement near the two-monolayer step has strong effects on the stability of the ordered structure in an (In, Ga) As alloy.

Original languageEnglish
Pages (from-to)741-746
Number of pages6
JournalUnknown Journal
Volume63
Issue number6
DOIs
Publication statusPublished - 1999

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

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