Theoretical investigation for the formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP alloy semiconductor using an empirical interatomic potential

Yoshihiro Kangawa, Noriyuki Kuwano, Kensuke Oki, Tomonori Ito

Research output: Contribution to journalArticle

Abstract

It is known that a CuAu-I (L10) type ordered structure is formed in an (In, Ga) As alloy semiconductor grown on a slightly tilted (110)InP substrate. The energy gains due to the formation of L10 in a bulk alloy, in a thick epi-layer and in a single epi-layer on a two-monolayer step, were investigated using an empirical interatomic potential calculation. It is confirmed that an L10 ordered structure is not stable in a bulk alloy. The ordered structure can exist stably in a thick epi-layer, but the energy gain due to the ordering is too small to form the ordered structure at the growth temperature. The L10 ordered structure can actually form at a two-monolayer step on the growth-surface. This indicates that the atomic arrangement near the two-monolayer step has strong effects on the stability of the ordered structure in an (In, Ga) As alloy.

Original languageEnglish
Pages (from-to)741-746
Number of pages6
JournalUnknown Journal
Volume63
Issue number6
DOIs
Publication statusPublished - Jan 1 1999

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formation mechanism
Semiconductor materials
Monolayers
Growth temperature
energy
substrate
semiconductor
Substrates
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

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Theoretical investigation for the formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP alloy semiconductor using an empirical interatomic potential. / Kangawa, Yoshihiro; Kuwano, Noriyuki; Oki, Kensuke; Ito, Tomonori.

In: Unknown Journal, Vol. 63, No. 6, 01.01.1999, p. 741-746.

Research output: Contribution to journalArticle

@article{b7da74cac48a446e8ab86998fc64c022,
title = "Theoretical investigation for the formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP alloy semiconductor using an empirical interatomic potential",
abstract = "It is known that a CuAu-I (L10) type ordered structure is formed in an (In, Ga) As alloy semiconductor grown on a slightly tilted (110)InP substrate. The energy gains due to the formation of L10 in a bulk alloy, in a thick epi-layer and in a single epi-layer on a two-monolayer step, were investigated using an empirical interatomic potential calculation. It is confirmed that an L10 ordered structure is not stable in a bulk alloy. The ordered structure can exist stably in a thick epi-layer, but the energy gain due to the ordering is too small to form the ordered structure at the growth temperature. The L10 ordered structure can actually form at a two-monolayer step on the growth-surface. This indicates that the atomic arrangement near the two-monolayer step has strong effects on the stability of the ordered structure in an (In, Ga) As alloy.",
author = "Yoshihiro Kangawa and Noriyuki Kuwano and Kensuke Oki and Tomonori Ito",
year = "1999",
month = "1",
day = "1",
doi = "10.2320/jinstmet1952.63.6_741",
language = "English",
volume = "63",
pages = "741--746",
journal = "Quaternary International",
issn = "1040-6182",
publisher = "Elsevier Limited",
number = "6",

}

TY - JOUR

T1 - Theoretical investigation for the formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP alloy semiconductor using an empirical interatomic potential

AU - Kangawa, Yoshihiro

AU - Kuwano, Noriyuki

AU - Oki, Kensuke

AU - Ito, Tomonori

PY - 1999/1/1

Y1 - 1999/1/1

N2 - It is known that a CuAu-I (L10) type ordered structure is formed in an (In, Ga) As alloy semiconductor grown on a slightly tilted (110)InP substrate. The energy gains due to the formation of L10 in a bulk alloy, in a thick epi-layer and in a single epi-layer on a two-monolayer step, were investigated using an empirical interatomic potential calculation. It is confirmed that an L10 ordered structure is not stable in a bulk alloy. The ordered structure can exist stably in a thick epi-layer, but the energy gain due to the ordering is too small to form the ordered structure at the growth temperature. The L10 ordered structure can actually form at a two-monolayer step on the growth-surface. This indicates that the atomic arrangement near the two-monolayer step has strong effects on the stability of the ordered structure in an (In, Ga) As alloy.

AB - It is known that a CuAu-I (L10) type ordered structure is formed in an (In, Ga) As alloy semiconductor grown on a slightly tilted (110)InP substrate. The energy gains due to the formation of L10 in a bulk alloy, in a thick epi-layer and in a single epi-layer on a two-monolayer step, were investigated using an empirical interatomic potential calculation. It is confirmed that an L10 ordered structure is not stable in a bulk alloy. The ordered structure can exist stably in a thick epi-layer, but the energy gain due to the ordering is too small to form the ordered structure at the growth temperature. The L10 ordered structure can actually form at a two-monolayer step on the growth-surface. This indicates that the atomic arrangement near the two-monolayer step has strong effects on the stability of the ordered structure in an (In, Ga) As alloy.

UR - http://www.scopus.com/inward/record.url?scp=0032665374&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032665374&partnerID=8YFLogxK

U2 - 10.2320/jinstmet1952.63.6_741

DO - 10.2320/jinstmet1952.63.6_741

M3 - Article

AN - SCOPUS:0032665374

VL - 63

SP - 741

EP - 746

JO - Quaternary International

JF - Quaternary International

SN - 1040-6182

IS - 6

ER -