Theoretical investigation of arsenic desorption from GaAs(001) surfaces under an atmosphere of hydrogen

Yuriko Matsuo; Yoshihiro Kangawa; Yoshinao Kumagai; Toshiharu Irisawa; Akinori Koukitu

doi:10.1143/jjap.42.2578

Theoretical investigation of arsenic desorption from GaAs(001) surfaces under an atmosphere of hydrogen

Yuriko Matsuo, Yoshihiro Kangawa, Yoshinao Kumagai, Toshiharu Irisawa, Akinori Koukitu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We investigate the desorption of As from GaAs(001) surfaces under an atmosphere of hydrogen using the ab initio pseudopotential method. The GaAs surface is (2 × 4) reconstructed with arsenic-monohydrogen bonds, arsenic-dihydrogen bonds, and Ga-Ga dimer bonds. We propose a mechanism for As desorption from the (001) surface in the presence of ambient hydrogen. The calculated activation energy is close to the experimental value for the (1 × 1) to (2 × 4) transition according to an in situ gravimetric (GM) method.

Original language	English
Pages (from-to)	2578-2581
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.42.2578
Publication status	Published - May 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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Theoretical investigation of arsenic desorption from GaAs(001) surfaces under an atmosphere of hydrogen. / Matsuo, Yuriko; Kangawa, Yoshihiro; Kumagai, Yoshinao et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 5 A, 05.2003, p. 2578-2581.

Research output: Contribution to journal › Article › peer-review

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AU - Koukitu, Akinori

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AB - We investigate the desorption of As from GaAs(001) surfaces under an atmosphere of hydrogen using the ab initio pseudopotential method. The GaAs surface is (2 × 4) reconstructed with arsenic-monohydrogen bonds, arsenic-dihydrogen bonds, and Ga-Ga dimer bonds. We propose a mechanism for As desorption from the (001) surface in the presence of ambient hydrogen. The calculated activation energy is close to the experimental value for the (1 × 1) to (2 × 4) transition according to an in situ gravimetric (GM) method.

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Theoretical investigation of arsenic desorption from GaAs(001) surfaces under an atmosphere of hydrogen

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