We investigate the desorption of As from GaAs(001) surfaces under an atmosphere of hydrogen using the ab initio pseudopotential method. The GaAs surface is (2 × 4) reconstructed with arsenic-monohydrogen bonds, arsenic-dihydrogen bonds, and Ga-Ga dimer bonds. We propose a mechanism for As desorption from the (001) surface in the presence of ambient hydrogen. The calculated activation energy is close to the experimental value for the (1 × 1) to (2 × 4) transition according to an in situ gravimetric (GM) method.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 A|
|Publication status||Published - May 2003|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)