Theoretical investigation of the thickness effect of ferroelectric incorporating semiconducting properties

Research output: Contribution to journalConference article

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Abstract

Stability of ferroelectric phase and its thickness-dependence were theoretically investigated by incorporating the semiconductor properties of ferroelectrics into the Ginzburg-Landau (GL) theory, which successfully explained experimental results for ferroelectric oxides, e.g., BaTiO3. An expression of the GL energy of a ferroelectric in a complex structure was derived. Using the energy, the semiconductivity was found to suppress the instability more effectively than the inhomogeneity (▽P)- and multidomain-effects.

Original languageEnglish
Pages (from-to)610-615
Number of pages6
JournalApplied Surface Science
Volume130-132
DOIs
Publication statusPublished - Jan 1 1998
Externally publishedYes
EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
Duration: Oct 27 1997Oct 30 1997

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Ferroelectric materials
Oxides
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Theoretical investigation of the thickness effect of ferroelectric incorporating semiconducting properties. / Watanabe, Yukio.

In: Applied Surface Science, Vol. 130-132, 01.01.1998, p. 610-615.

Research output: Contribution to journalConference article

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