Theoretical investigations of adatom adsorptions on the As-stabilized GaAs(1 1 1)A surface

A. Taguchi, K. Shiraishi, T. Ito, Y. Kangawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigated adsorptions of Ga and As atoms on the As-stabilized GaAs(1 1 1)A surface by using first-principles calculations. We found that a single As adatom does not occupy the As lattice site on the surface, but the As lattice site becomes active for an As adatom when the As adatom couples with Ga adatoms. This finding indicates that Ga has a self-surfactant effect on the As-stabilized surface. We also found that adatoms do not form stable microstructures on the As-stabilized surface. This is consistent with the reported experimental results that the layer-by-layer growth is difficult. We discuss epitaxial growth processes based on the calculation results.

Original languageEnglish
Pages (from-to)173-177
Number of pages5
JournalSurface Science
Volume493
Issue number1-3
DOIs
Publication statusPublished - Nov 1 2001
Externally publishedYes

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Adatoms
adatoms
Adsorption
adsorption
Epitaxial growth
Surface-Active Agents
Surface active agents
surfactants
gallium arsenide
Atoms
microstructure
Microstructure
atoms

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Theoretical investigations of adatom adsorptions on the As-stabilized GaAs(1 1 1)A surface. / Taguchi, A.; Shiraishi, K.; Ito, T.; Kangawa, Y.

In: Surface Science, Vol. 493, No. 1-3, 01.11.2001, p. 173-177.

Research output: Contribution to journalArticle

Taguchi, A. ; Shiraishi, K. ; Ito, T. ; Kangawa, Y. / Theoretical investigations of adatom adsorptions on the As-stabilized GaAs(1 1 1)A surface. In: Surface Science. 2001 ; Vol. 493, No. 1-3. pp. 173-177.
@article{b7b94f167a6145cc9b40b73d36e53b92,
title = "Theoretical investigations of adatom adsorptions on the As-stabilized GaAs(1 1 1)A surface",
abstract = "We investigated adsorptions of Ga and As atoms on the As-stabilized GaAs(1 1 1)A surface by using first-principles calculations. We found that a single As adatom does not occupy the As lattice site on the surface, but the As lattice site becomes active for an As adatom when the As adatom couples with Ga adatoms. This finding indicates that Ga has a self-surfactant effect on the As-stabilized surface. We also found that adatoms do not form stable microstructures on the As-stabilized surface. This is consistent with the reported experimental results that the layer-by-layer growth is difficult. We discuss epitaxial growth processes based on the calculation results.",
author = "A. Taguchi and K. Shiraishi and T. Ito and Y. Kangawa",
year = "2001",
month = "11",
day = "1",
doi = "10.1016/S0039-6028(01)01209-2",
language = "English",
volume = "493",
pages = "173--177",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Theoretical investigations of adatom adsorptions on the As-stabilized GaAs(1 1 1)A surface

AU - Taguchi, A.

AU - Shiraishi, K.

AU - Ito, T.

AU - Kangawa, Y.

PY - 2001/11/1

Y1 - 2001/11/1

N2 - We investigated adsorptions of Ga and As atoms on the As-stabilized GaAs(1 1 1)A surface by using first-principles calculations. We found that a single As adatom does not occupy the As lattice site on the surface, but the As lattice site becomes active for an As adatom when the As adatom couples with Ga adatoms. This finding indicates that Ga has a self-surfactant effect on the As-stabilized surface. We also found that adatoms do not form stable microstructures on the As-stabilized surface. This is consistent with the reported experimental results that the layer-by-layer growth is difficult. We discuss epitaxial growth processes based on the calculation results.

AB - We investigated adsorptions of Ga and As atoms on the As-stabilized GaAs(1 1 1)A surface by using first-principles calculations. We found that a single As adatom does not occupy the As lattice site on the surface, but the As lattice site becomes active for an As adatom when the As adatom couples with Ga adatoms. This finding indicates that Ga has a self-surfactant effect on the As-stabilized surface. We also found that adatoms do not form stable microstructures on the As-stabilized surface. This is consistent with the reported experimental results that the layer-by-layer growth is difficult. We discuss epitaxial growth processes based on the calculation results.

UR - http://www.scopus.com/inward/record.url?scp=0035500518&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035500518&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(01)01209-2

DO - 10.1016/S0039-6028(01)01209-2

M3 - Article

AN - SCOPUS:0035500518

VL - 493

SP - 173

EP - 177

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -