Theoretical limits of superjunction considering with charge imbalance margin

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Abstract

This paper reports that the theoretical limit of the superjunction (SJ) structure is discussed with considering the charge imbalance margin. The SJ structure is attractive to reduce the specific on-resistance dramatically due to the charge compensation concept. The breakdown voltage, however, is lowered by the charge imbalance between n- and p-columns due to the electric field modulation. The analytical models of the theoretical on-resistance limit considered with the charge imbalance margin were provided in this work. The analytical results showed that the on-resistance reduction required not only lateral pitch narrowing but also the charge imbalance margin cut. This tendency can be confirmed from the experimental results in the previous works. The theoretical limit was estimated to be 7 mΩcm2 for 600 V-class SJ-MOS with the charge imbalance margin of 3%.

Original languageEnglish
Title of host publication2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages125-128
Number of pages4
ISBN (Electronic)9781479962594
DOIs
Publication statusPublished - Jun 12 2015
Externally publishedYes
Event27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 - Hong Kong, China
Duration: May 10 2015May 14 2015

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2015-June
ISSN (Print)1063-6854

Other

Other27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
CountryChina
CityHong Kong
Period5/10/155/14/15

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Saito, W. (2015). Theoretical limits of superjunction considering with charge imbalance margin. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015 (pp. 125-128). [7123405] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2015.7123405