TY - GEN
T1 - Theoretical limits of superjunction considering with charge imbalance margin
AU - Saito, Wataru
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/6/12
Y1 - 2015/6/12
N2 - This paper reports that the theoretical limit of the superjunction (SJ) structure is discussed with considering the charge imbalance margin. The SJ structure is attractive to reduce the specific on-resistance dramatically due to the charge compensation concept. The breakdown voltage, however, is lowered by the charge imbalance between n- and p-columns due to the electric field modulation. The analytical models of the theoretical on-resistance limit considered with the charge imbalance margin were provided in this work. The analytical results showed that the on-resistance reduction required not only lateral pitch narrowing but also the charge imbalance margin cut. This tendency can be confirmed from the experimental results in the previous works. The theoretical limit was estimated to be 7 mΩcm2 for 600 V-class SJ-MOS with the charge imbalance margin of 3%.
AB - This paper reports that the theoretical limit of the superjunction (SJ) structure is discussed with considering the charge imbalance margin. The SJ structure is attractive to reduce the specific on-resistance dramatically due to the charge compensation concept. The breakdown voltage, however, is lowered by the charge imbalance between n- and p-columns due to the electric field modulation. The analytical models of the theoretical on-resistance limit considered with the charge imbalance margin were provided in this work. The analytical results showed that the on-resistance reduction required not only lateral pitch narrowing but also the charge imbalance margin cut. This tendency can be confirmed from the experimental results in the previous works. The theoretical limit was estimated to be 7 mΩcm2 for 600 V-class SJ-MOS with the charge imbalance margin of 3%.
UR - http://www.scopus.com/inward/record.url?scp=84944673321&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84944673321&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2015.7123405
DO - 10.1109/ISPSD.2015.7123405
M3 - Conference contribution
AN - SCOPUS:84944673321
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 125
EP - 128
BT - 2015 IEEE 27th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 27th IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD 2015
Y2 - 10 May 2015 through 14 May 2015
ER -