Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET

Akira Nakajima, Wataru Saito, Shinichi Nishizawa, Hiromichi Ohashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Power converter efficiencies of 1200-V class Si-IGBT/SiC-SBD hybrid pairs and a SiCMOSFET/ SiC-SBD pair were theoretically compared at a switching frequency above the limit of human hearing (20 kHz). Si-IGBT losses were simulated by TCAD. SiC device losses were calculated by analytical minimum loss models. Calculated efficiencies of the full-SiC pair were slightly higher than that of the hybrid pairs at conventional current densities less than 200 A/cm2. At a higher current density of 400 A/cm2, the hybrid pairs have a potential of high performance which is comparable with the full-SiC efficiency.

Original languageEnglish
Title of host publicationPCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9783800739240
Publication statusPublished - 2015
Externally publishedYes
Event2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015 - Nuremberg, Germany
Duration: May 19 2015May 20 2015

Other

Other2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015
CountryGermany
CityNuremberg
Period5/19/155/20/15

Fingerprint

Insulated gate bipolar transistors (IGBT)
Power converters
Current density
Audition
Switching frequency

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Nakajima, A., Saito, W., Nishizawa, S., & Ohashi, H. (2015). Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET. In PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of [7149120] Institute of Electrical and Electronics Engineers Inc..

Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET. / Nakajima, Akira; Saito, Wataru; Nishizawa, Shinichi; Ohashi, Hiromichi.

PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 2015. 7149120.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakajima, A, Saito, W, Nishizawa, S & Ohashi, H 2015, Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET. in PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of., 7149120, Institute of Electrical and Electronics Engineers Inc., 2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015, Nuremberg, Germany, 5/19/15.
Nakajima A, Saito W, Nishizawa S, Ohashi H. Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET. In PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc. 2015. 7149120
Nakajima, Akira ; Saito, Wataru ; Nishizawa, Shinichi ; Ohashi, Hiromichi. / Theoretical Loss analysis of power converters with 1200 v class Si-IGBT and SiC-MOSFET. PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 2015.
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