Abstract
The T4site adsorption of group-13 atoms such as Al,Ga,In and Tl on Si(111) surface can be well understood as a result of formation of three bonds between a tri-valent metal atom and three Si dangling bonds, forming (√3× √3) periodicity. However, it is well known that Tl exhibits not only tri-valence but also mono-valence nature caused by relativistic effect. Therefore, there has been a growing interest in the adsorption of Tl on Si(111) surface because Tl has been known to show quite different behavior from other group-13 atoms in (1×1) surface structures at 1.0 ML. We investigated the chemisorption of Tl adatoms on Si(111) by using theoretical calculation under periodic boundary condition. Tl is found to occupy the three fold-filled sites (T4 site) in (√3×√3)-Tl surface at 1/3 ML as to other tri-valent group-13 atoms. Our calculations also show that the Tl adatoms occupy the T4 site (1×1)-Tl surface at 1.0ML.
| Original language | English |
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| Pages | 942 |
| Number of pages | 1 |
| Publication status | Published - 2005 |
| Event | 54th SPSJ Annual Meeting 2005 - Yokohama, Japan Duration: May 25 2005 → May 27 2005 |
Other
| Other | 54th SPSJ Annual Meeting 2005 |
|---|---|
| Country/Territory | Japan |
| City | Yokohama |
| Period | 5/25/05 → 5/27/05 |
All Science Journal Classification (ASJC) codes
- Engineering(all)