Theory on STM images of an Si(001) surface with steps

Yoshimichi Nakamura, Hiroshi Kawai, Masatoshi Nakayama

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The influence of steps on the arrangement of the buckling of dimers of an Si(001) surface has been studied by Monte Carlo simulation. Coupling constants for the buckling of the dimers were determined by first-principles calculations. We treated the SA step for the buckling of dimers by the free boundary condition. It was found that the fluctuation extends over a long distance from the edge in the temperature region of the transition to the c(4 × 2) structure. The influence of kink in the SA step line was also studied. STM images were calculated and it was found that asymmetric images are locally induced in the dimer row connected to the kink. The calculated images agreed well with observed images.

Original languageEnglish
Pages (from-to)500-503
Number of pages4
JournalSurface Science
Volume357-358
DOIs
Publication statusPublished - Jun 20 1996

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Dimers
buckling
dimers
Buckling
free boundaries
Boundary conditions
boundary conditions
simulation
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Theory on STM images of an Si(001) surface with steps. / Nakamura, Yoshimichi; Kawai, Hiroshi; Nakayama, Masatoshi.

In: Surface Science, Vol. 357-358, 20.06.1996, p. 500-503.

Research output: Contribution to journalArticle

Nakamura, Yoshimichi ; Kawai, Hiroshi ; Nakayama, Masatoshi. / Theory on STM images of an Si(001) surface with steps. In: Surface Science. 1996 ; Vol. 357-358. pp. 500-503.
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